Abstract:Strained GexSi1-x/Si superlattices with Ge content of 0.48 and 0.49 grown by MBE at 420°C (sample A) and 570°C (sample B) were annealed and studied by X-ray diffraction, Raman scattering and TEM. The cross section TEM image of the samples before annealing showed that the growth of sample A was two-dimensional, but for sample B, the growth of the GexSi1-x layer was three-dimensional. By the X-ray diffraction spectra before and after annealing for samples A and B, the strain relaxations from X-ray diffraction measurements were 27% and 35% for samples A and B, respectively. This difference might be from the three-dimensional growth of sample B, in which the strain was stronger than that in sample A. Raman scattering measurements showed that the Ge-Ge peak and the Ge-Si peak shifted towards the lower energy after annealing, while the Si-Si peak shifted towards the higher energy. The reason for the shift of these peaks could be explained by the common contribution of the strain relaxation and the internal diffusion of Ge atoms into the Si layer. In addition, the behavior of the strained GexSi1-x/Si superlattice annealed by rapid thermal annealing technology was also studied. A sample of superlattice with a Ge content of 0.46 was rapidly thermal annealed at the temperature range of 600 to 1000°C and at each temperature the sample was annealed twice for 40 s each time. From X-ray diffraction measurements it could be found that as the annealing temperature increased from 600 to 900°C, the strain relaxation would increase from 19% up to 57%. As the sample was annealed at 1000°C, no satellite peaks were in the X-ray diffraction spectra and no multilayer structure could be observed in the cross section TEM image, that is, in the sample the GeSi layers were completely mixed up with the Si layers.

An X-ray Scattering Study on Inverted Ge–Si Huts Grown at Low Temperatures

Microstructures of Ge/Si Superlattices Growth at Low Temperature

Microstructures of Ge/Si Superlattices Growtn at Low Temperature

Intensity Modulation of Glancing Angle X-Ray Diffraction Spectra of Ge<sub>x</sub>Si<sub>1−x</sub>/Si Superlattices

Large and small angle x-ray scattering studies of Si/SiGe superlattices grown by gas-source molecular beam epitaxy

Intensity Modulation of Glancing Angle X-Ray Diffraction Spectra of GexSi1−x/Si Superlattices

Structural Characteristics of Self-Assembled-Ge/Si Quantum Dot Superlattices

Optical properties of Ge/Si quantum dot superlattices

Study of Si and Ge growth on Si(100) surface

An investigation on the thermal stability of the GexSi1-x⧸Si superlattice grown by MBE

Study of Ge Thin Heterostructures by Synchrotron Radiation X-Ray Reflection

Structural stability of SiGe/Si strained-layer superlattices

Suppression of Si-Ge Interfacial Vibration Mode in the Raman Spectrum of A Si6ge4 Superlattice

The Structure of GexSi1−x/Si Strained Layer Superlattices and Heterostructures

Lattice Strains and Composition of Self-Organized Ge Dots Grown on Si(001)

Quantitative Strain Characterization of SiGe Heterostructures by High-Resolution Transmission Electron Microscopy

SMALL-ANGLE X-RAY DIFFRACTION ANALYSIS OF GexSi1-x/Si SUPERLATTICE

The Property of Si／SiGe／Si Heterostructure During Thermal Budget Characterized by HRXRD

Theoretical Study of Structures and Growth of Strained Si/Ge Superlattices

Study of Semiconductor Super Thin Heterostructures with Synchrotron Radiation X-Ray Standing Wave Technique

Strains in Si Substrate Induced by Formation of Ge Islands