Abstract:The manipulation of phonon transport with coherent waves in solids is of fundamental interest and useful for thermal conductivity design. Based on equilibrium molecular dynamics simulations and lattice dynamics calculations, the thermal transport in SiGe superlattice nanowires with a tuned Si/Ge interface density was investigated by using the core-shell and phononic structures as the primary stacking layers. It was found that the thermal conductivity decreased with the increase of superlattice period lengths (Lp) when Lp was larger than 4 nm. This is because introducing additional Si/Ge interfaces can enhance phonon scattering. However, when Lp<4 nm, the increased interface density could promote heat transfer. Phonon density-of-state analysis demonstrates that new modes between 10 and 14 THz are formed in structures with dense Si/Ge interfaces, which is a signature of coherent phonon transport as those modes do not belong to bulk Si or Ge. The density of the newly generated modes increases with the increase of interface density, leading to an enhanced coherent transport. Besides, with the increase of interface density, the energy distribution of the newly generated modes becomes more balanced on Si and Ge atoms, which also facilitates heat transfer. Our current work is not only helpful for understanding coherent phonon transport but also beneficial for the design of new materials with tunable thermal conductivity.

Suppression of Si-Ge Interfacial Vibration Mode in the Raman Spectrum of A Si6ge4 Superlattice

Ge/Si superlatices grown on thin relaxed GeSi alloy buffer with Ge islanding buried layer

Structural stability of SiGe/Si strained-layer superlattices

Phonon and Raman spectra: effect of interface diffusion of strained Si/Ge superlattices

Lattice Dynamics of Si/Ge (001) Superlattices

Vibrational Properties of Si/Ge and Α-Sn/ge Superlattices with Intermixed Interfaces

Structural Characteristics of Self-Assembled-Ge/Si Quantum Dot Superlattices

Interface Alloying Effects on the LO and TO Phonons in Si/Ge Superlattices.

Vibrational properties of Si/Ge superlattices

Raman-Scattering Spectroscopy of Gesi/Si Strained-Layer Superlattice

Effect of layer thickness variation on light scattering by acoustic phonons in SiGe/Si superlattices

Optical properties of Ge/Si quantum dot superlattices

Acoustic Attenuation and Optical-Absorption Effects on Light Scattering by Acoustic Phonons in Superlattices.

Interface Broadening And Raman Scattering In Si1-Xgex/Si Superlattices

Enhancing the Coherent Phonon Transport in SiGe Nanowires with Dense Si/Ge Interfaces

An X-ray Scattering Study on Inverted Ge–Si Huts Grown at Low Temperatures

Folded Acoustic Phonon Modes in Ge/Si Quantum Dot Superlattices with Different Periods

Intensity Modulation of Glancing Angle X-Ray Diffraction Spectra of Ge<sub>x</sub>Si<sub>1−x</sub>/Si Superlattices

Microstructures of Ge/Si Superlattices Growth at Low Temperature

Raman Spectra As A Measure of Interface Alloying for Iv/Iv Superlattices

Influence of GeSi Interfacial Layer on Ge–Ge Optical Phonon Mode in SiO2 Films Embedded with Ge Nanocrystals