Abstract:Exploring the phonon characteristics of novel group-IV binary XC (X = Si, Ge, Sn) carbides and their polymorphs has recently gained considerable scientific/technological interest as promising alternatives to Si for high-temperature, high-power, optoelectronic, gas-sensing, and photovoltaic applications. Historically, the effects of phonons on materials were considered to be a hindrance. However, modern research has confirmed that the coupling of phonons in solids initiates excitations, causing several impacts on their thermal, dielectric, and electronic properties. These studies have motivated many scientists to design low-dimensional heterostructures and investigate their lattice dynamical properties. Proper simulation/characterization of phonons in XC materials and ultrathin epilayers has been challenging. Achieving the high crystalline quality of heteroepitaxial multilayer films on different substrates with flat surfaces, intra-wafer, and wafer-to-wafer uniformity is not only inspiring but crucial for their use as functional components to boost the performance of different nano-optoelectronic devices. Despite many efforts in growing strained zinc-blende (zb) GeC/Si (001) epifilms, no IR measurements exist to monitor the effects of surface roughness on spectral interference fringes. Here, we emphasize the importance of infrared reflectivity Rω and transmission Tω spectroscopy at near normal θi = 0 and oblique θi ≠ 0 incidence (Berreman effect) for comprehending the phonon characteristics of both undoped and doped GeC/Si (001) epilayers. Methodical simulations of Rω and Tω revealing atypical fringe contrasts in ultrathin GeC/Si are linked to the conducting transition layer and/or surface roughness. This research provided strong perspectives that the Berreman effect can complement Raman scattering spectroscopy for allowing the identification of longitudinal optical ωLO phonons, transverse optical ωTO phonons, and LO-phonon-plasmon coupled ωLPP+ modes, respectively.

Influence of GeSi Interfacial Layer on Ge–Ge Optical Phonon Mode in SiO2 Films Embedded with Ge Nanocrystals

Size-independent low-frequency Raman scattering in Ge-nanocrystal-embedded SiO_2 films

Si–Si Optical Phonon Behavior in Localized Si Clusters of Si X Ge1−x Alloy Nanocrystals

Structure and Photoluminescence of Ge Nanoparticles Embedded in SiO2 Gel Glasses Fabricated at Different Temperatures

Confinement Effect of Optical Phonons in Si–Ge Alloy Nanocrystals

Formation, Structure, and Phonon Confinement Effect of Nanocrystalline Si1−xGex in SiO2-Si-Ge Cosputtered Films

Low-Frequency Raman Scattering of Ge and Si Nanocrystals in Silica Matrix

Sol–gel preparation of Ge nanocrystals embedded in SiO2 glasses

Detecting The Phonon Interference Effect In Si/Ge Nanocomposite By Wave Packets

Enhancing the Coherent Phonon Transport in SiGe Nanowires with Dense Si/Ge Interfaces

Phonon and Raman spectra: effect of interface diffusion of strained Si/Ge superlattices

Annealing Temperature Dependence of Raman Scattering in Ge+-implanted SiO2 Films

Local Vibration at the Surface of a Ge Nanocrystal Embedded in a Silicon Oxide Matrix

Interface Alloying Effects on the LO and TO Phonons in Si/Ge Superlattices.

Phonon-Spectra Of Strained Si And Ge

Electronic states and phonon properties of Ge x Si 1−x nanostructures

Dependency of a localized phonon mode intensity on compositional cluster size in SiGe alloys

Simulations of Infrared Reflectivity and Transmission Phonon Spectra for Undoped and Doped GeC/Si (001)

Thermal conduction in Si and SiGe phononic crystals explained by phonon mean free path spectrum

Effect of extended defects on phonon confinement in polycrystalline Si and Ge films

Phonon Mode Study of Si Nanocrystals Using Micro-Raman Spectroscopy