Abstract:Germanium nanocrystals (nc-Ge) embedded in SiO2 glassy matrix have been prepared on glass substrates and silicon (100) wafers by an rf cosputtering technique and post-annealing treatment in vacuum atmosphere. Using Raman spectrometry, X-ray diffraction, and UV/VIS/NIR transmittance and reflectance measurements, we have investigated the structures and the optical properties of the Ge-SiO2 composite films. The results show that Ge nanocrystals could be formed in Ge-SiO2 composite films by thermal annealing. The growth of nc-Ge is associated with the thermodynamical breakup of GeO bonds and/or evacuation of oxygen atoms. As the size of nc-Ge reaches 4.6 nm, the efficient optical band gap of the Ge-SiO2 composite film is found to shift to higher energy. Furthermore, broad-band multi-peak photoluminescence (PL) spectra are observed at room temperature. It is found that there exist Ge nanocrystals only in the emitting samples, and the emitting energy is approximately 2.05 eV. The multi-peak PL spectrum is considered to result from the different local environments of Ge nanocrystals in annealed sample.

Si–Si Optical Phonon Behavior in Localized Si Clusters of Si X Ge1−x Alloy Nanocrystals

Confinement Effect of Optical Phonons in Si–Ge Alloy Nanocrystals

Influence of GeSi Interfacial Layer on Ge–Ge Optical Phonon Mode in SiO2 Films Embedded with Ge Nanocrystals

Structure and Photoluminescence of Ge Nanoparticles Embedded in SiO2 Gel Glasses Fabricated at Different Temperatures

Formation, Structure, and Phonon Confinement Effect of Nanocrystalline Si1−xGex in SiO2-Si-Ge Cosputtered Films

Size-independent low-frequency Raman scattering in Ge-nanocrystal-embedded SiO_2 films

Low-Frequency Raman Scattering of Ge and Si Nanocrystals in Silica Matrix

Dependency of a localized phonon mode intensity on compositional cluster size in SiGe alloys

Local Vibration at the Surface of a Ge Nanocrystal Embedded in a Silicon Oxide Matrix

Electronic states and phonon properties of Ge x Si 1−x nanostructures

Phonon Mode Study of Si Nanocrystals Using Micro-Raman Spectroscopy

Annealing Temperature Dependence of Raman Scattering in Ge+-implanted SiO2 Films

Effects of Si Content on the Optical and Electrical Properties of SiOx Films

Confinement of Si-like LO phonons: Effects of Si1-xGex alloyed layers

Identification of Local Silicon Cluster Nanostructures Inside Sixge1-X Alloy Nanocrystals by Raman Spectroscopy

Strain and Phonon Confinement in Self-Assembled Ge Quantum Dot Superlattices

Raman Investigation of Defective Sic Nanocrystals

Raman scattering and room-temperature visible photoluminescence from Ge nanocrystals embedded in SiO2 thin films

Interface Alloying Effects on the LO and TO Phonons in Si/Ge Superlattices.

Optical Constants and Band Gap Expansion of Size Controlled Silicon Nanocrystals Embedded in SiO2 Matrix

Local Structure of Ge Nanocrystals Embedded in SiO2 Studied by Fluorescence EXAFS Technique