Abstract:The nucleation and structure of silicon nanocrystals formed by different preparation conditions and silicon concentration (28 - 70 area %) have been studied using Transmission Electron Microscopy (TEM), Energy Filtered TEM (EFTEM) and Secondary Ion Mass Spectroscopy (SIMS). The nanocrystals were formed after heat treatment at high temperature of a sputtered 10 nm thick silicon rich oxide on 3 nm SiO$_2$ layer made by Rapid Thermal Oxidation (RTO) of silicon. Nanocrystals precipitate when the excess silicon concentration exceeds 50 area %. Below this percentage amorphous silicon nanoclusters were found. In-situ heat treatment of the samples in the TEM showed that the crystallization requires a temperature above 800$^o$C. The nanocrystals precipitate in a 4 nm band, 5 nm from the Si substrate and 4 nm from the SiO$_2$ sample surface. The silicon nucleates where the excess Si concentration is the highest. The top surface has less excess Si due to reaction with oxygen from the ambient during annealing. The SiO$_2$-RTO layer is more Si rich due to Si diffusion from the SiO$_2$-Si layer into RTO. Twinning and stacking faults were found in nanocrystals with 4-10 nm in diameter. These types of defects may have large effects upon the usability of the material in electronic devices. Both single and double twin boundaries have been found in the nanocrystals by high resolution transmission electron microscopy (HRTEM). Image simulations were carried out in order to obtain more information about the defects and nanocrystals. The stacking faults are extrinsic and located in the twin boundaries.

Identification of Local Silicon Cluster Nanostructures Inside Sixge1-X Alloy Nanocrystals by Raman Spectroscopy

Si–Si Optical Phonon Behavior in Localized Si Clusters of Si X Ge1−x Alloy Nanocrystals

Fabrication and Characterisation of Silicon Quantum Dots in SiO 2 /si 3 N 4 Hybrid Matrix

Nonthermal plasma synthesized freestanding silicon–germanium alloy nanocrystals

Low-Frequency Raman Scattering of Ge and Si Nanocrystals in Silica Matrix

Local Vibration at the Surface of a Ge Nanocrystal Embedded in a Silicon Oxide Matrix

Confinement Effect of Optical Phonons in Si–Ge Alloy Nanocrystals

Size-independent low-frequency Raman scattering in Ge-nanocrystal-embedded SiO_2 films

Raman Analysis of Amorphous Silicon Ruthenium Thin Films Embedded with Nanocrystals

Electronic states and phonon properties of Ge x Si 1−x nanostructures

Low-Frequency Raman Scattering from Nanocrystals Caused by Coherent Excitation of Phonons

Investigation on microstructures of MnSix thin films by Raman spectroscopy

Characterization of amorphous and crystalline silicon nanoclusters in ultra thin silica layers

Microstructures of Ge-dots/Si Multilayered Structures Fabricated by Ni-induced Lateral Crystallization

Raman Scattering of Alternating Nanocrystalline Silicon/amorphous Silicon Multilayers

Vibrational Properties of Near-Surface Regions of Silicon Nanocrystallites

Local Structure of Ge Nanocrystals Embedded in SiO2 Studied by Fluorescence EXAFS Technique

Raman-Scattering Spectroscopy of Gesi/Si Strained-Layer Superlattice

Near-Infrared Femtosecond Laser For Studying The Strain In Si1-Xgex Alloy Films Via Second-Harmonic Generation

Sub-Micron Imaging Of Sub-Surface Nanocrystalline Structure In Silicon

Fine Structures of Raman Spectra of Lif Cluster-Based Nanofilms