Abstract:The nucleation and structure of silicon nanocrystals formed by different preparation conditions and silicon concentration (28 - 70 area %) have been studied using Transmission Electron Microscopy (TEM), Energy Filtered TEM (EFTEM) and Secondary Ion Mass Spectroscopy (SIMS). The nanocrystals were formed after heat treatment at high temperature of a sputtered 10 nm thick silicon rich oxide on 3 nm SiO$_2$ layer made by Rapid Thermal Oxidation (RTO) of silicon. Nanocrystals precipitate when the excess silicon concentration exceeds 50 area %. Below this percentage amorphous silicon nanoclusters were found. In-situ heat treatment of the samples in the TEM showed that the crystallization requires a temperature above 800$^o$C. The nanocrystals precipitate in a 4 nm band, 5 nm from the Si substrate and 4 nm from the SiO$_2$ sample surface. The silicon nucleates where the excess Si concentration is the highest. The top surface has less excess Si due to reaction with oxygen from the ambient during annealing. The SiO$_2$-RTO layer is more Si rich due to Si diffusion from the SiO$_2$-Si layer into RTO. Twinning and stacking faults were found in nanocrystals with 4-10 nm in diameter. These types of defects may have large effects upon the usability of the material in electronic devices. Both single and double twin boundaries have been found in the nanocrystals by high resolution transmission electron microscopy (HRTEM). Image simulations were carried out in order to obtain more information about the defects and nanocrystals. The stacking faults are extrinsic and located in the twin boundaries.

Raman Analysis of Amorphous Silicon Ruthenium Thin Films Embedded with Nanocrystals

Structural Variation and Electrical Properties of Amorphous Silicon Ruthenium Thin Films Embedded with Nanocrystals

Influence of annealing on microstructures and photoluminescence of nano-composite silicon film

Micro-Raman spectroscopy studies of as-deposited and furnace-annealed a-SiNx:H films

Crystallization and Raman Shift of Array-Orderly Silicon Nanowires after Annealing at High Temperature

Raman Scattering of Alternating Nanocrystalline Silicon/amorphous Silicon Multilayers

Characterization of the Interface Region During the Agglomeration of Silicon Nanocrystals in Silicon Dioxide

Raman Investigation of Oxidation Mechanism of Silicon Nanowires

Nanocrystalline Si Studied by Beam-Based Positron Annihilation Spectroscopy

Temperature-dependent Raman Scattering of Silicon Nanowires.

Infrared Spectra of Silicon Nanowires

Raman Characterization of the Structural Evolution in Amorphous and Partially Nanocrystalline Hydrogenated Silicon Thin Films Prepared by PECVD

Annealing Environment Effect on the Nanocrystalline Silicon Related Photoluminescence in Silicon Rich Alumina Films

Efficient Sensitized Photoluminescence of Er Silicate in Silicon Oxide Films Embedded with Amorphous Silicon Clusters, Part II: Photoluminescence

Characterization of amorphous and crystalline silicon nanoclusters in ultra thin silica layers

Effect of annealing on microstructure and photoluminescence of nano-composite silicon film

Rapid thermal annealing and crystallization mechanisms study of silicon nanocrystal in silicon carbide matrix

The Crystallization Kinetics Study of Finemet-Co Amorphous Alloys

Raman study of structural order of a-SiNx:H and its change upon thermal annealing

Novel Sandwich Structure for Aluminum Induced Crystallization of Amorphous Silicon Thin Films at Low Temperature

Investigation of Atomic-Layer-deposited Ruthenium Nanocrystal Growth on SiO2 and Al2O3 Films