Abstract:Arrays of vertically aligned single crystalline Si nanowires (NWs) decorated with arbitrarily shaped Si nanocrystals (NCs) have been fabricated by a silver assisted wet chemical etching method. Scanning electron microscopy and transmission electron microscopy are performed to measure the dimensions of the Si NWs as well as the Si NCs. A strong broad band and tunable visible (2.2 eV) to near-infrared (1.5 eV) photoluminescence (PL) is observed from these Si NWs at room temperature (RT). Our studies reveal that the Si NCs are primarily responsible for the 1.5-2.2 eV emission depending on the cross-sectional area of the Si NCs, while the large diameter Si/SiOx NWs yield distinct NIR PL consisting of peaks at 1.07, 1.10 and 1.12 eV. The latter NIR peaks are attributed to TO/LO phonon assisted radiative recombination of free carriers condensed in the electron-hole plasma in etched Si NWs observed at RT for the first time. Since the shape of the Si NCs is arbitrary, an analytical model is proposed to correlate the measured PL peak position with the cross-sectional area (A) of the Si NCs, and the bandgap (E(g)) of nanostructured Si varies as E(g) = E(g) (bulk) + 3.58 A(-0.52). Low temperature PL studies reveal the contribution of non-radiative defects in the evolution of PL spectra at different temperatures. The enhancement of PL intensity and red-shift of the PL peak at low temperatures are explained based on the interplay of radiative and non-radiative recombinations at the Si NCs and Si/SiO(x) interface. Time resolved PL studies reveal bi-exponential decay with size correlated lifetimes in the range of a few microseconds. Our results help to resolve a long standing debate on the origin of visible-NIR PL from Si NWs and allow quantitative analysis of PL from arbitrarily shaped Si NCs.

Infrared Spectra of Silicon Nanowires

Synthesis and Raman Spectra of Si-Nanowires

Temperature-dependent Raman Scattering of Silicon Nanowires.

Raman Investigation of Oxidation Mechanism of Silicon Nanowires

Raman Spectrum of Array-Ordered Crystalline Silicon Nanowires

1.5 Μm Luminescence of Silicon Nanowires Fabricated by Thermal Evaporation of SiO

Cathodoluminescence investigation of silicon nanowires fabricated by thermal evaporation of SiO

Raman Spectral Study of Silicon Nanowires: High-order Scattering and Phonon Confinement Effects

Study on the infrared absorption of nitrogen-oxygen complex in silicon

Crystallization and Raman Shift of Array-Orderly Silicon Nanowires after Annealing at High Temperature

Raman Spectral Study of Silicon Nanowires

Photo absorption enhancement in strained silicon nanowires: An atomistic study

Tiny SiO2 nano-wires synthesized on Si (111) wafer

Non-destructive characterization of silicon nanowires and nanowire coatings using mid-infrared spectroscopy

Strong broadband optical absorption in silicon nanowire films

Infrared Absorption of Nitrogen–oxygen Complex in Silicon

Temperature Dependence of the First-Order Raman Scattering in Silicon Nanowires

Lattice Vibrational Modes and their Frequency Shifts in Semiconductor Nanowires

Tiny SiO2 nano-wires synthesized on Si (1 1 1 ) wafer

Infrared Spectroscopic Characterization of Silicon Nitride Films—Optical Dispersion Induced Frequency Shifts

Origin of visible and near-infrared photoluminescence from chemically etched Si nanowires decorated with arbitrarily shaped Si nanocrystals