Abstract:We demonstrate two distinct experimental processes involving the large-area growth of ordered and disordered silicon nanowire arrays (SiNWs) on a p-type silicon substrate using the metal-assisted chemical etching method. The two processes are based on the etching of monocrystalline silicon wafers by randomly distributed Ag films and ultra-thin Au films with ordered nano-mesh arrays, respectively, wherein the growth of SiNWs is implemented using a specific proportion of a HF-containing solution at room temperature. In this study, the microstructural change mechanisms for the two morphologically different arrays before and after annealing were investigated using Raman spectra. The effects of various mechanisms on the observed Raman scattering peak's deviation from symmetry, redshift and broadening were analyzed. The evolution of the unstable amorphous structures of nanoscale materials during the high-temperature annealing process was observed via high-resolution scanning electron microscope (SEM) observations. The scattering peak parameters determined from the Raman spectra led to conclusions concerning the various mechanisms by which high-temperature annealing influences the microstructures of the two morphologically different SiNWs fabricated on the p-type silicon substrate. Therefore, the deviation of SiNWs from the monocrystalline silicon scattering peak at 520.05 cm−1 when changing the diameter of the nanowire columns was calculated to further analyze the effect of thermal annealing on Raman characteristics.

Temperature Dependence of the First-Order Raman Scattering in Silicon Nanowires

Temperature-dependent Raman Scattering of Silicon Nanowires.

Effects of Pre-Stress and Surface Stress on Phonon Thermal Conductivity of Rectangular Si Nanowires

Raman Spectral Study of Silicon Nanowires: High-order Scattering and Phonon Confinement Effects

Raman Spectrum of Array-Ordered Crystalline Silicon Nanowires

Infrared Spectra of Silicon Nanowires

Effect of High-Temperature Annealing on Raman Characteristics of Silicon Nanowire Arrays

Raman Spectral Study of Silicon Nanowires

Phonon Surface Scattering Controlled Length Dependence of Thermal Conductivity of Silicon Nanowires.

Crystallization and Raman Shift of Array-Orderly Silicon Nanowires after Annealing at High Temperature

Modified Confinement Model for Size Dependent Raman Shift and Linewidth of Silicon Nanocrystals

Synthesis and Raman Spectra of Si-Nanowires

Isotope Doping-Induced Crossover Shift in the Thermal Conductivity of Thin Silicon Nanowires.

The Effect of Si-nanocrystal Size Distribution on Raman Spectrum

Effect of Temperature on Raman Intensity of Nm-Thick WS2: Combined Effects of Resonance Raman, Optical Properties, and Interface Optical Interference

The Effect of the Electron–phonon Coupling on the Thermal Conductivity of Silicon Nanowires

Phonon Mode Study of Si Nanocrystals Using Micro-Raman Spectroscopy

Laser-Induced Fano Resonance Scattering in Silicon Nanowires

Specific Heat Of Individual Silicon Nanowires

Raman Scattering As a Probe of Phonon Confinement and Surface Optical Modes in Semiconducting Nanowires

Effect of changing incident wavelength on Raman features of optical phonons in SiC nanorods and TaC nanowires