Abstract:For the bulk polycrystalline materials, the size of microstructures such as the grain size shrinking to the nanometer scale will result in an apparent change of the physical and mechanical performance of materials, which are distinguished remarkably with the ones of coarse-grain polycrystalline materials. In order to understand the influence of grain size on the properties of polycrystalline materials completely, the theoretical models with the point of view of the microstructures are presented to analyze grain size effects on the phonon thermal conductivity, electrical conductivity and the elastic modulus. For the phonon thermal conductivity, the phonon transport in both the grain interior and grain-boundary are discussed by using the phonon radiative transfer equation, and the analytical expression of conductivity is addressed to describe the influence of grain size on the thermal properties of polycrystalline materials. The electron grain-boundary scattering in the polycrystalline materials is taken into account as the boundary conditions of electron transport in the grain interior, to investigate the grain size effect on electrical conductivity. The predictions of proposed models for the phonon thermal conductivity and the electrical conductivity can agree well with experimental results. For elastic properties of nanocrystalline materials, a framework based on the continuum theory of mechanics is developed by considering the interface energy effects and grain-boundary effects to describe grain-size effects on elastic modulus. Base on the numerical results, it is illustrated that the effects of interface energy and grain-boundary can not be considered for large grain size. When the grain size is under several tens nanometers, the grain-size effects are significant and the effects of interface energy and grain-boundary must be taken into account.

The Effect of Si-nanocrystal Size Distribution on Raman Spectrum

Modified Confinement Model for Size Dependent Raman Shift and Linewidth of Silicon Nanocrystals

Phonon Mode Study of Si Nanocrystals Using Micro-Raman Spectroscopy

Si-Nanocrystals with Bimodal Size Distribution in Evenly Annealed SiO Revealed with Raman Scattering

Size-Dependent Optical Absorption of Silicon Nanocrystals Embedded in Sio2/Si3n4 Hybrid Matrix

Comparison Of Models For Raman Spectra Of Si Nanocrystals

Temperature Dependence of the First-Order Raman Scattering in Silicon Nanowires

Raman Shifts in Si Nanocrystals

Grain-Size Dependent Thermal, Electrical And Mechanical Properties Of Bulk Nanocrystalline Materials

Influence of Nanocrystal Size on Dielectric Functions of Si Nanocrystals Embedded in SiO2 Matrix

Raman Spectral Study of Silicon Nanowires: High-order Scattering and Phonon Confinement Effects

Confinement Effect of Optical Phonons in Si–Ge Alloy Nanocrystals

Raman Spectral Study of Silicon Nanowires

Raman Spectrum of Array-Ordered Crystalline Silicon Nanowires

Annealing Effects on the Size of Si-nanocrystals Embedded in Bulk SiO

The effect of size distributions of Si nanoclusters on photoluminescence from ensembles of Si nanoclusters

Finite Size Effect on the Raman Frequency of Phonons in Nano-Semiconductors

Dependence of vibrational density of states and Raman spectra on size in non-polar and polar nano-crystalline semiconductors

Reconstruction Of Phonon Dispersion In Si Nanocrystals

Study On The Applied Limitation Of The Micro-Crystal Model For Raman Spectra Of Nano-Crystalline Semiconductors

Size-independent low-frequency Raman scattering in Ge-nanocrystal-embedded SiO_2 films