Abstract:The intensity response of polarized Raman is studied using backscattered Raman spectroscopy. In previous works, it was confirmed that the Raman intensities of the E-2g(1) modes for WS2 and MoS2 as well as the G mode of graphene are independent of the polarization angle. However, a strong correlation is found between them in this work using a confocal Raman system. The E-2g(1) and A(1g) modes of nanometer-thick WS2 and MoS2 samples as well as the G mode of bulk graphene are used to investigate the polarization dependency of the Raman intensity for each mode. Additionally, the effects of temperature and sample structure on the Raman intensity are studied using the WS2 sample on both suspended and supported areas. Results of these experiments are explained and fitted by the theoretical Raman intensity profiles. This theoretical study is conducted using the classical theory of polarized Raman spectroscopy and includes all the information about polarization of excitation laser, rotation of the beam splitter, and different vibrational modes of samples, which is considered in Raman tensors. It is concluded that Raman intensity variation with incident laser polarization not only is a function of the material structure but also carries information about the optical functionality of the Raman system.

Effect of changing incident wavelength on Raman features of optical phonons in SiC nanorods and TaC nanowires

Effect of defects on optical phonon Raman spectra in SiC nanorods

Nanoscale Probing of Localized Surface Phonon Polaritons in SiC Nanorods with Swift Electrons

Raman Spectra of SiC Nanorods with Different Excitation Wavelengths

Temperature-dependent Raman Scattering of Silicon Nanowires.

Temperature Dependence of the First-Order Raman Scattering in Silicon Nanowires

Optical Phonons in Polar Semiconductor Nanowires

Raman spectroscopy of optical phonons confined in semiconductor quantum dots and nanocrystals

Raman Scattering As a Probe of Phonon Confinement and Surface Optical Modes in Semiconducting Nanowires

Raman Scattering Studies of Individual Polar Semiconducting Nanowires: Phonon Splitting and Antenna Effects

Raman Spectral Study of Silicon Nanowires: High-order Scattering and Phonon Confinement Effects

Manipulation of surface phonon polaritons in SiC nanorods

Experimental Studies of Enhanced Raman Scattering from a Hexagonally Poledlitao3crystal

Finite Size Effect on the Raman Frequency of Phonons in Nano-Semiconductors

Variation of Raman Feature on Excitation Wavelength in Silicon Nanowires

Lack of Dependence of the Raman Frequency of Optical Vibrational Modes on Excitation Wavelength in Polar Nanosemiconductors

Polarized Raman of Nanoscale Two-Dimensional Materials: Combined Optical and Structural Effects

Laser-Induced Fano Resonance Scattering in Silicon Nanowires

Raman Spectral Study of Silicon Nanowires

Substrate-induced Raman frequency variation for single-walled carbon nanotubes.

Raman Investigation of Oxidation Mechanism of Silicon Nanowires