Variation of Raman Feature on Excitation Wavelength in Silicon Nanowires

SL Zhang,W Ding,Y Yan,J Qu,B Li,LY Li,KT Yue,DP Yu
DOI: https://doi.org/10.1063/1.1527228
IF: 4
2002-01-01
Applied Physics Letters
Abstract:A variation of Raman feature on excitation wavelength in silicon nanowires was observed. Based on the quantum size confinement effect, the resonant Raman scattering phenomenon and the existence of different sizes of Si grains in the samples, a plausible mechanism to interpret the novel feature was proposed and supported by experimental facts.
What problem does this paper attempt to address?