Abstract:We have synthesized silicon nanocrystalline structures from thermal annealing of thin film amorphous silicon-based multilayers. The annealing procedure that was carried out in vacuum at temperatures up to 1100 °C is integrated in a X-ray diffraction (XRD) setup for real-time monitoring of the formation phases of the nanostructures. The microstructure of the crystallized films is investigated through experimental measurements combined with atomistic simulations of realistic nanocrystalline silicon (nc-Si) models. The multilayers consisting of uniformly alternating thicknesses of hydrogenated amorphous silicon and silicon oxide (SiO2) were deposited by plasma enhanced chemical vapor deposition on crystalline silicon and Corning glass substrates. The crystallized structure consisting of nc-Si structures embedded in an amorphous matrix were further characterized through XRD, Raman spectroscopy, and Fourier transform infrared measurements. We are able to show the different stages of nanostructure formation and how the sizes and the crystallized mass fraction can be controlled in our experimental synthesis. The crystallized silicon structures with large crystalline filling fractions exceeding 50% have been simulated with a robust classical molecular dynamics technique. The crystalline filling fractions and structural order of nc-Si obtained from this simulation are compared with our Raman and XRD measurements.

Structural Variation and Electrical Properties of Amorphous Silicon Ruthenium Thin Films Embedded with Nanocrystals

Raman Analysis of Amorphous Silicon Ruthenium Thin Films Embedded with Nanocrystals

Structural Variation and Its Influence on the 1/f Noise of A-Si1-xrux Thin Films Embedded with Nanocrystals

Carrier Sign Reversal in Amorphous Silicon Ruthenium Thin Films Deposited by Co-Sputtering

Band Engineering of Amorphous Silicon Ruthenium Thin Film and Its Near-Infrared Absorption Enhancement Combined with Nano-Holes Pattern on Back Surface of Silicon Substrate

New Paramagnetic Centre And High Conductivity In A-Si1-Xrux : H Thin Films

Effects of Dissolved Nitrogen in Improving Barrier Properties of Ruthenium

Novel Sandwich Structure for Aluminum Induced Crystallization of Amorphous Silicon Thin Films at Low Temperature

Microstructure and Conductivity of Large Area Nanocrystalline Silicon Films Grown by Specially Designed Thermal-Assisted Chemical Vapor Deposition

Evaluation Of Microstructures And Carrier Transport Behaviors During The Transition Process From Amorphous To Nanocrystalline Silicon Thin Films

New Paramagnetic Center and High Conductivity in A-Si1-xrux:H Thin Films

Study of Crystallization and Phase Transformation in Amorphous Co-Si Thin Film by X-Ray Diffraction

Crystallized Silicon Nanostructures - Experimental Characterization and Atomistic Simulations

Investigation of nanocrystallization of a-Si1 - XGe x:H thin films diluted with argon in the PECVD system

Micro-Raman spectroscopy studies of as-deposited and furnace-annealed a-SiNx:H films

Phase transformation and water adsorption behavior of ALD deposited and annealed Ru and RuO2 films

Investigation of Atomic-Layer-deposited Ruthenium Nanocrystal Growth on SiO2 and Al2O3 Films

X-Ray Diffraction Study of Alternating Nanocrystalline Silicon/Amorphous Silicon Multilayers

Annealing Behavior and Hardness Enhancement of Amorphous Sicn Thin Films

Raman Characterization of the Structural Evolution in Amorphous and Partially Nanocrystalline Hydrogenated Silicon Thin Films Prepared by PECVD

Structural Relaxation of Amorphous Silicon Carbide Thin Films in Thermal Annealing