Band Engineering of Amorphous Silicon Ruthenium Thin Film and Its Near-Infrared Absorption Enhancement Combined with Nano-Holes Pattern on Back Surface of Silicon Substrate

Anran Guo,Hao Zhong,Wei Li,Deen Gu,Xiangdong Jiang,Yadong Jiang
DOI: https://doi.org/10.1016/j.apsusc.2016.05.086
IF: 6.7
2016-01-01
Applied Surface Science
Abstract:Silicon is widely used in semiconductor industry but has poor performance in near-infrared photoelectronic devices because of its bandgap limit. In this study, a narrow bandgap silicon rich semiconductor is achieved by introducing ruthenium (Ru) into amorphous silicon (a-Si) to form amorphous silicon ruthenium (a-Si1-xRux) thin films through co-sputtering. The increase of Ru concentration leads to an enhancement of light absorption and a narrower bandgap. Meanwhile, a specific light trapping technique is employed to realize high absorption of a-Si1-xRux thin film in a finite thickness to avoid unnecessary carrier recombination. A double-layer absorber comprising of a-Sii,Rux thin film and silicon random nano-holes layer is formed on the back surface of silicon substrates, and significantly improves near infrared absorption while the leaky light intensity is less than 5%. This novel absorber, combining narrow bandgap thin film with light trapping structure, may have a potential application in near-infrared photoelectronic devices. (C) 2016 Elsevier B.V. All rights reserved.
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