Enhancement of Near-Infrared Photovoltaic Response of Si/Au Schottky-Junction Structure by Band-Bending Approaches

Yanru Yang,Xiyuan Dai,Dan Shen,Li Wu,Liang Yu,Fengyang Ma,Kaixin Liu,Zhongyao Yan,Jian Sun,Ming Lu

DOI: https://doi.org/10.1002/pssa.202400563

2024-01-01

Abstract:A combined approach of band bending is employed to enhance the near-infrared (NIR) photovoltaic (PV) response of a Si/Au Schottky junction (SHJ) device. As a reference, the basic architecture of the SHJ device consists of textured n-Si and gold nanoparticles (Au NPs). Its photoelectric conversion efficiency at 1319 nm wavelength is 0.0302%. A series of band-bending approaches are then applied to the reference device in sequence, aiming to minimize the electric loss of the structure by strengthening built-in electric field. These approaches include introductions of an Al2O3 layer for front field passivation, a p+-Si layer to form a p+n-like junction at the front of the device and a SiO2 layer for rear field passivation. With these modifications, under 1319 nm illumination, the open-circuit voltage eventually increases by 14%, the short-circuit current increases by 18% and the photoelectric conversion efficiency of the device increases by 66% to reach 0.0501%. The results of this work propose a strategy to minimize the electric loss in an NIR PV device. A near-infrared silicon photovoltaic device based on Schottky junction is realized in this work. Aiming at minimizing the electric loss in the device, a series of band-bending approaches are sequentially applied to enhance the total built-in electric field. As a result, the photoelectric conversion efficiency of the structure increases by 66%.image (c) 2024 WILEY-VCH GmbH