Nano-Structured Silicon: Fabrication, Optical Property, Defect States and Device Application

Hao Zhong,Dong Yang Li,Yu Hao Song,Wei Li,Xiang Dong Jiang,Ya Dong Jiang
DOI: https://doi.org/10.4028/www.scientific.net/msf.947.66
2019-01-01
Materials Science Forum
Abstract:We use two different methods to fabricate nanostructured silicon on the surface of C-Si: femtosecond laser etching (FLE) and deep reactive ion etching (DRIE) combined with plasma immersion ion implantation (PIII). Nanocone silicon arrays of dense and random distribution are obtained by FLE. Meanwhile, cylindroid silicon nanostructures of excellent regularity and uniform coverage are achieved by DRIE. These nanostructured silicon materials show a remarkable enhancement on absorptance at near-infrared wavelength. Moreover, the minority carriers lifetime measurement is also carried out to evaluate defect states caused by two etching processes and their influence on semiconductor physical effects. A Si-PIN photoelectronic detector with nanostructured silicon at the back surface exhibits high near-infrared responsivity. These novel results may have a potential application in near-infrared photoelectronic devices.
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