Strong Mid-Infrared Absorption and High Crystallinity of Microstructured Silicon Formed by Femtosecond Laser Irradiation in NF3 Atmosphere

xiao dong,ning li,cong liang,haibin sun,guojin feng,zhen zhu,hezhu shao,ximing rong,li zhao,jun zhuang
DOI: https://doi.org/10.7567/APEX.6.081301
IF: 2.819
2013-01-01
Applied Physics Express
Abstract:Arrays of high-quality crystalline conical spikes were formed on silicon surface in the presence of NF3 with femtosecond laser irradiation. The surface of the structures is smooth, and Raman scattering spectroscopy shows that few silicon polymorphs such as a-Si, Si-XII, and Si-III were observed in the conical structures. In the mid-infrared wavelength range of 3-16 mu m, the structured surface exhibits a high absorptance up to 0.8. Additionally, the absorptance of the sample remains almost unchanged after the annealing process. These properties of the structured silicon will make it a promising material for mid-infrared applications in optoelectronic fields. (C) 2013 The Japan Society of Applied Physics
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