Abstract:As a pillar material of semiconductors, single-crystal silicon (Si) has attracted much attention due to its excellent electronic properties. Meanwhile, femtosecond laser processing as a convenient fabrication method for miniaturized structures provides an effective way to improve the performance of Si-based devices. However, the final-state analysis of femtosecond laser-induced Si micro-nano structures remains to be explored. In this study, the evolution of the micro-nano structures and the variation of surface and subsurface damage with pulse number were studied. Based on the atomic structure, the amorphous layer, dislocation layer, and unaffected layer were found. The amorphous layer resulted from the re-solidification of melted materials. The dislocation layer consisted of dislocations and lattice distortion. The unaffected layer retained the initial lattice structure and was not affected by laser irradiation. The high temperature and stress induced by multiple pulses led to the stacking faults and nano-twins in the subsurface layer. The evolution of the Si structure was essentially a transition process from a dislocation layer to a high-density defect layer and a transition process from nanotips to laser-induced periodic surface structures. During this process, dislocations dominated the femtosecond laser-induced microstructural deformation, affecting the nano-hardness of the irradiated surface. As a result, the nano-hardness of Si structures fabricated using femtosecond laser processing was maximally enhanced by 9.54%. This work provides new information about ultrafast laser-induced surface and subsurface damage, which is significant for the efficient and high-precision fabrication of Si-based functional micro-nano devices.

A Nitrogen-Hyperdoped Silicon Material Formed by Femtosecond Laser Irradiation

Improving Crystallinity of Femtosecond-Laser Hyperdoped Silicon Via Co-Doping with Nitrogen

Crystallinity and Sub-Band Gap Absorption of Femtosecond-Laser Hyperdoped Silicon Formed in Different N-Containing Gas Mixtures

Fabrication of nitrogen-hyperdoped silicon by high-pressure gas immersion excimer laser doping

Black Silicon IR Photodiode Supersaturated with Nitrogen by Femtosecond Laser Irradiation

Strong Mid-Infrared Absorption and High Crystallinity of Microstructured Silicon Formed by Femtosecond Laser Irradiation in NF3 Atmosphere

High Near Infrared Absorption of Hyper‐doped Silicon Induced by Co‐doping of Sulfur and Nitrogen

Formation of the thermal donors in the hydrogen-implanted nitrogen-doped silicon crystal

Research and Development of Femtosecond-Laser Hyperdoped Silicon

Stress Dependent Structure of Annealed Nitrogen-Doped Cz-Si

Electronic Band Structure and Sub-band-gap Absorption of Nitrogen Hyperdoped Silicon

Defects in nitrogen-doped multicrystalline silicon

Enhanced Oxygen Precipitation In Neutron-Irradiated Nitrogen-Doped Czochralski Silicon Crystal

Thermal Acceptor Formation in Nitrogen-Doped Silicon

One-Step femtosecond laser irradiation of Single-Crystal Silicon: Evolution of Micro-Nano structures and damage investigation

Creating zinc-hyperdoped silicon with modulated conduction type by femtosecond laser irradiation

Nitrogenation of Amorphous Silicon : Reactive Molecular Dynamics Simulations

Sulfur-Doped Silicon Photodiode by Ion Implantation and Femtosecond Laser Annealing

Microstructured Silicon Created with a Nanosecond Neodymium-Doped Yttrium Aluminum Garnet Laser

Progressive Evolution of Silicon Surface Microstructures Via Femtosecond Laser Irradiation in Ambient Air

Mechanism of Femtosecond-Laser-induced Periodic Nanostructure Formation on Crystalline Silicon Surface Immersed in Water