Abstract:SiC, as one typical 3rd generation semiconductor, has high potential to be used as the substrate for harsh environment sensors. However, the etching of this material is still challenging. Femtosecond laser has been demonstrated to have great potential in SiC etching, but the material removal mechanisms need further investigation. Herein, the two-temperature model considering carrier concentration is utilized to illustrate the microscopic mechanism of carrier concentration and temperature change in SiC caused by femtosecond laser irradiation. An 800 nm, 50 fs, 10 Hz Ti: sapphire femtosecond laser was used to process SiC in different media including air, HF and water. The ablation threshold of SiC in the three media is calculated. The highest ablation threshold (4.98 J/cm(2)) is obtained when the pulse number N = 50, in air. The lowest ablation threshold (0.53 J/cm(2)) is obtained when the pulse number N = 300, in HF. Results indicate that ablation threshold is strongly dependent on the laser pulse number and processing medium. Based on the cleavage phenomenon of SiC crystal structure observed by micro-nano characterization, the mechanism model of femtosecond laser-induced periodic structure of SiC surface based on material lattice cleavage is established, and the relationship between the intrinsic texture and the evolution of periodic structure of ablation surface is revealed. This will provide a new way to understand the ablation mechanism of femtosecond laser. In addition, the processing media has significant effect on surface roughness and chemical bond characteristics of SiC. Liquid processing media can reduce the surface roughness and avoid oxidation, which is helpful to manufacture SiC devices with specific surface requirements using femtosecond laser as an auxiliary method.

Investigation of mechanism and surface morphology on the femtosecond laser ablation of silicon nitride under different auxiliary processing environments

Surface Integrity Analysis of Si3N4 under Cryogenic Assisted Femtosecond Laser Ablation

Nanosecond pulsed laser ablation of silicon—finite element simulation and experimental validation

Investigations on the ablation behavior of C/SiC under femtosecond laser

Influence of liquid environments on femtosecond laser ablation of silicon

Investigation on femtosecond laser combined with dynamic wet etching machining of SiC/SiC

Influence of surface morphology on processing of C/SiC composites via femtosecond laser

Investigations on the oxidation behavior and removal mechanism of SiC/SiC composites by multi-pulse femtosecond laser ablation

Experimental Research on Laser Assisted Machining of Silicon Nitride Ceramics

Ablation and surface structuring of Si3N4 ceramics by nanosecond laser pulses

Spatio-temporal multi-scale observation of the evolution mechanism during millisecond laser ablation of SiC f /SiC

Crystal Cleavage, Periodic Nanostructure And Surface Modification Of Sic Ablated By Femtosecond Laser In Different Media

Effects of Parameters in Femtosecond Laser Micromachining on Ablation of Silicon

Spatio-temporal multi-scale observation of the evolution mechanism during millisecond laser ablation of SiCf/SiC

Study of Femtosecond Laser Ablation and Polishing Process on 4H-SiC Substrate

Experimental and Simulation Research on Femtosecond Laser Induced Controllable Morphology of Monocrystalline SiC

Asymmetric Femtosecond Laser Ablation of Silicon Surface Governed by the Evolution of Surface Nanostructures

Ablation Threshold and Material Removal Mechanisms of SiC Processed by Femtosecond Laser

Laser Ablation of 6H-Sic Single Crystals and Spectral Characterization

Improved Laser Ablation Resistance of Si-C-N Precursor Derived Ceramics in Air

Morphological Features of Silicon Substrate by Using Different Frequency Laser Ablation in Air and Water