Experimental and Simulation Research on Femtosecond Laser Induced Controllable Morphology of Monocrystalline SiC

Yang Hua,Zhenduo Zhang,Jiyu Du,Xiaoliang Liang,Wei Zhang,Yukui Cai,Quanjing Wang
DOI: https://doi.org/10.3390/mi15050573
IF: 3.4
2024-04-27
Micromachines
Abstract:Silicon carbide (SiC) is utilized in the automotive, semiconductor, and aerospace industries because of its desirable characteristics. Nevertheless, the traditional machining method induces surface microcracks, low geometrical precision, and severe tool wear due to the intrinsic high brittleness and hardness of SiC. Femtosecond laser processing as a high-precision machining method offers a new approach to SiC processing. However, during the process of femtosecond laser ablation, temperature redistribution and changes in geometrical morphology features are caused by alterations in carrier density. Therefore, the current study presented a multi-physics model that took carrier density alterations into account to more accurately predict the geometrical morphology for femtosecond laser ablating SiC. The transient nonlinear evolutions of the optical and physical characteristics of SiC irradiated by femtosecond laser were analyzed and the influence of laser parameters on the ablation morphology was studied. The femtosecond laser ablation experiments were performed, and the ablated surfaces were subsequently analyzed. The experimental results demonstrate that the proposed model can effectively predict the geometrical morphology. The predicted error of the ablation diameter is within the range from 0.15% to 7.44%. The predicted error of the ablation depth is within the range from 1.72% to 6.94%. This work can offer a new way to control the desired geometrical morphology of SiC in the automotive, semiconductor, and aerospace industries.
chemistry, analytical,nanoscience & nanotechnology,instruments & instrumentation,physics, applied
What problem does this paper attempt to address?
The problem that this paper attempts to solve is how to achieve precise control of the geometric morphology of materials by controlling laser parameters when using femtosecond laser to process single - crystal silicon carbide (SiC) materials. Specifically, when traditional machining methods are used to process SiC materials, due to their inherent high hardness and brittleness, problems such as surface micro - cracks, low geometric precision and severe tool wear are likely to occur. Although femtosecond laser machining, as a high - precision machining method, can effectively suppress thermally - induced cracks, pits and residual stress, during the femtosecond laser ablation process, due to the change in carrier density, the temperature is redistributed and the geometric morphology characteristics change, making it difficult to accurately predict and control the geometric morphology of SiC materials. Therefore, this paper proposes a multi - physical - field model considering the change in carrier density to more accurately predict the geometric morphology of SiC materials after femtosecond laser ablation, and the effectiveness of the model is verified by experiments. ### Main research contents: 1. **Establishment of multi - physical - field model**: This model takes into account the change in carrier density and can more accurately predict the geometric morphology of SiC materials after femtosecond laser ablation. The model analyzes the evolution of transient nonlinear optical and physical characteristics of SiC materials under femtosecond laser irradiation. 2. **Experimental verification**: By using femtosecond lasers with different powers to ablate single - crystal SiC materials, the experimental results show that the proposed model can effectively predict the ablation diameter and depth, and the prediction errors are respectively between 0.15% and 7.44% and between 1.72% and 6.94%. 3. **Influence of carrier density change**: The influence of carrier density change on the temperature field is studied, and it is found that the model without considering carrier density change has large errors in predicting the ablation diameter and depth, and the maximum errors are respectively 46.30% and 73.54%. ### Research significance: This research provides a new method. In industries such as automobiles, semiconductors and aerospace, the geometric morphology of SiC materials can be controlled by selecting appropriate femtosecond laser parameters, thereby improving machining precision and surface quality. This not only helps to solve the shortcomings of traditional machining methods, but also provides a theoretical basis and technical support for high - precision manufacturing.