Abstract:Silicon carbide (SiC) is widely used in many research fields because of its excellent properties. The femtosecond laser has been proven to be an effective method for achieving high-quality and high-efficiency SiC micromachining. In this article, the ablation mechanism irradiated on different surfaces of 6H-SiC by a single pulse under different energies was investigated. The changes in material elements and the geometric spatial distribution of the ablation pit were analyzed using micro-Raman spectroscopy, Energy Dispersive Spectrum (EDS), and an optical microscope, respectively. Moreover, the thresholds for structural transformation and modification zones of 6H-SiC on different surfaces were calculated based on the diameter of the ablation pits created by a femtosecond laser at different single-pulse energies. Experimental results show that the transformation thresholds of the Si surface and the C surface are 5.60 J/cm2 and 6.40 J/cm2, corresponding to the modification thresholds of 2.26 J/cm2 and 2.42 J/cm2, respectively. The Raman and EDS results reveal that there are no phase transformations or material changes on different surfaces of 6H-SiC at low energy, however, decomposition and oxidation occur and then accumulate into dense new phase material under high-energy laser irradiation. We found that the distribution of structural phase transformation is uneven from the center of the spot to the edge. The content of this research reveals the internal evolution mechanism of high-quality laser processing of hard material 6H-SiC. We expect that this research will contribute to the further development of SiC-based MEMS devices.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to explore the processing mechanisms of femtosecond lasers at different energies on different surfaces (Si - face and C - face) of single - crystal 6H - SiC materials, especially laser - induced phase transitions and structural modifications. Specifically, the research aims to: 1. **Analyze the ablation mechanisms of 6H - SiC materials on different surfaces under single - pulse irradiation of femtosecond lasers at different energies**: Through experimental observation and analysis of the geometric spatial distribution of ablation pits and changes in material elements at different energies, the relationship between laser energy and material response is explored. 2. **Calculate the thresholds of structural transformation and modification regions of 6H - SiC materials on different surfaces**: Based on the changes in the diameter of ablation pits, the thresholds of structural transformation and modification regions on different surfaces are calculated using theoretical models, thereby providing a theoretical basis for precisely controlling laser processing parameters. 3. **Reveal the internal evolution mechanisms of 6H - SiC materials under high - energy laser irradiation**: Through micro - Raman spectroscopy and energy - spectrum analysis, the decomposition, oxidation, and accumulation processes of new - phase materials that occur under high - energy laser irradiation while there are no phase transitions or composition changes in materials under low - energy laser irradiation are studied. 4. **Explore the influence of laser processing parameters on the surface morphology of 6H - SiC materials**: Through optical microscope observation of the morphological changes of the material surface after laser irradiation at different energies, the evolution law of the surface morphology during the laser processing process is understood. In summary, this research aims to deeply understand the internal mechanisms of the interaction between femtosecond lasers and 6H - SiC materials, and provide scientific basis and technical support for achieving high - quality laser processing and promoting the development of SiC - based MEMS devices.

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