Single-pulse femtosecond laser ablation of monocrystalline silicon: A modeling and experimental study

Chong Chen,Fan Zhang,Yang Zhang,Xin Xiong,Bing-Feng Ju,Hailong Cui,Yuan-Liu Chen
DOI: https://doi.org/10.1016/j.apsusc.2021.151722
IF: 6.7
2022-02-01
Applied Surface Science
Abstract:In this paper, a visualization model by using the COMSOL® Multiphysics was established to investigate the quantitative relationship between the parameters of the single-pulse femtosecond laser and the geometries of the ablated monocrystalline silicon micro-holes. Monocrystalline silicon was ablated with different femtosecond laser single-pulse energies and the diameters as well as the depths of the obtained micro-holes were compared with the prediction results of the established visualization model. The comparison results have demonstrated that the single-pulse femtosecond laser ablation results can be predicted effectively based on the established visualization model. The prediction error of the ablated micro-hole diameter and depth were within 2.31% and 15.40%, respectively, without any prior optimization experiments. It is thus possible to precisely conduct femtosecond laser ablation on monocrystalline silicon for desired geometries by utilizing appropriate parameters without trial-and-errors as in traditional femtosecond laser ablation technologies.
chemistry, physical,physics, applied, condensed matter,materials science, coatings & films
What problem does this paper attempt to address?
The problem that this paper attempts to solve is: by establishing a visual model, to study the quantitative relationship between single - pulse femtosecond laser parameters and the geometry of single - crystal silicon micropores. Specifically, the author hopes to predict the influence of different laser energies on the diameter and depth of single - crystal silicon micropores during the single - pulse femtosecond laser processing, so as to accurately control the geometry of femtosecond laser processing without conducting a large number of trial - and - error experiments. ### Background of the Paper With the continuous development of miniaturized and integrated processing and measurement systems, the demand for various micro - and nano - components is increasing day by day. Although traditional processing techniques such as focused ion beam processing and electron beam processing can achieve the processing of three - dimensional structures, they are inefficient and difficult to handle large - area three - dimensional microstructure surfaces. Femtosecond laser processing shows great potential in the field of precision manufacturing (especially in the processing of metal, semiconductor and dielectric materials) due to its unique characteristics of ultrashort pulse width and extremely high peak intensity. However, selecting appropriate femtosecond laser parameters to obtain the desired geometry has always been a difficult problem in femtosecond laser processing, and usually requires a large number of optimization experiments. ### Research Objectives This paper aims to reveal the relationship between single - pulse femtosecond laser parameters and the geometry of single - crystal silicon micropores by establishing a visual model based on COMSOL® Multiphysics. Through experimental verification of the effectiveness of this model, the ultimate goal is to be able to accurately control the geometry of femtosecond laser processing without conducting a large number of trial - and - error experiments. ### Main Methods 1. **Theoretical Modeling**: - A one - dimensional two - temperature model was established to describe the energy balance process of the electron system and the lattice system during femtosecond laser processing. - The model equations are as follows: \[ C_e \frac{\partial T_e}{\partial t} = \frac{\partial}{\partial r} \left( k_e \frac{\partial T_e}{\partial r} \right) - \alpha_k (T_e - T_l) + S(z, r_d, t) \] \[ C_1 \frac{\partial T_l}{\partial t} = \frac{\partial}{\partial r} \left( k_l \frac{\partial T_l}{\partial r} \right) + \alpha_k (T_e - T_l) \] - Among them, \( C_e \) and \( C_1 \) respectively represent the specific heat capacities of the electron system and the lattice system, \( k_e \) and \( k_l \) respectively represent the thermal conductivities of the electron system and the lattice system, \( \alpha_k \) represents the electron - lattice coupling coefficient, and \( S(z, r_d, t) \) represents the total source term. 2. **Experimental Verification**: - Single - crystal silicon was processed using single - pulse femtosecond laser, and the experimental parameters included different single - pulse energies. - The diameters and depths of the processed micropores were observed by scanning electron microscope (SEM) and compared with the model prediction results. ### Experimental Results - The micropore diameters and depths predicted by the model are basically consistent with the experimental results, and the prediction errors are within 2.31% and 15.40% respectively. - The effectiveness of the model has been verified through experiments, proving that the geometry of femtosecond laser processing can be accurately controlled without conducting a large number of trial - and - error experiments. ### Conclusions In this paper, by establishing a visual model based on COMSOL® Multiphysics, the geometry of single - crystal silicon micropores processed by single - pulse femtosecond laser has been successfully predicted. This model provides a theoretical basis for femtosecond laser processing and helps to improve processing efficiency and accuracy.