Abstract:The research aims to study the application of remote Femto Second (FS) technology in black silicon material preparation and optical devices. Based on the principle and characteristic research of FS technology, the interaction between FS and silicon is adopted to propose a scheme for preparing black silicon material through experiments. Moreover, the experimental parameters are optimized. Then, the scheme of using the FS for etching polymer optical power splitter as a new technical means is proposed. In addition, while ensuring processing accuracy, the appropriate process parameters of laser etching photoresist are obtained. The results show that the performance of black silicon prepared with SF 6 as the background gas is greatly improved in the 400-2200nm range. However, the performance of black silicon samples with the two-layer structure etched at different laser energy densities has little difference. Black silicon with a Se+Si two-layer film structure has the best optical absorption performance in the infrared range of 1100nm-2200nm. Besides, the optical absorption rate is the highest when the laser scanning rate is 0.5mm/s. In the band of >1100nm, when the maximum laser energy density is 6.5kJ/m2, the overall absorption of the etched sample is the worst. The absorption rate is the best when the laser energy density is 3.9kJ/m2. It suggests that the proper parameter selection greatly impacts the quality of the final laser-etched sample.

Fabrication of Black Silicon with Thermostable Infrared Absorption by Femtosecond Laser

Direct fabrication of black Si with enhanced infrared transmittance using femtosecond laser irradiation

Ultrafast Laser-Induced Black Silicon, from Micro-Nanostructuring, Infrared Absorption Mechanism, to High Performance Detecting Devices

Black Silicon IR Photodiode Supersaturated with Nitrogen by Femtosecond Laser Irradiation

Strong Infrared Photoluminescence from Black Silicon Made with Femtosecond Laser Irradiation

Sub-bandgap Photo-Response of Non-Doped Black-Silicon Fabricated by Nanosecond Laser Irradiation.

Femtosecond laser fabrication of silicon surface microstructures for enhanced infrared radiation under electric drive

Large-Scale Black Silicon Induced by Femtosecond Laser Assisted With Laser Cleaning

Broad band enhanced infrared light absorption of a femtosecond laser microstructured silicon

First-principles research on mechanism of sub-band absorption of amorphous silicon induced by ultrafast laser irradiation

Gold-Hyperdoped Black Silicon with High Ir Absorption by Femtosecond Laser Irradiation

Femtosecond Laser Direct Writing Assisted Nonequilibriumly Doped Silicon n<sup>+</sup>-p Photodiodes for Light Sensing

Electronic States of Defect with Impurity and Infrared Emission on Black Silicon Prepared by an Ns-Laser.

Sub-bandgap photo-response of black silicon fabricated by femtosecond laser irradiation under water

Strong Mid-Infrared Absorption and High Crystallinity of Microstructured Silicon Formed by Femtosecond Laser Irradiation in NF3 Atmosphere

Great enhancement of infrared light absorption of silicon surface-structured by femtosecond laser pulses in N2 ambient

Sub-Bandgap Photo-Response of Chromium Hyperdoped Black Silicon Photodetector Fabricated by Femtosecond Laser Pulses

Broadband MSM photodetector based on S-doped black silicon fabricated by femtosecond laser

The use of remote Femto Second technology in the preparation of black silicon material and optical devices

Infrared Light Absorption and Emissivity of Silicon Microstructured by Femtosecond Laser in SF6

Sulfur-Doped Silicon Photodiode by Ion Implantation and Femtosecond Laser Annealing