Abstract:As a pillar material of semiconductors, single-crystal silicon (Si) has attracted much attention due to its excellent electronic properties. Meanwhile, femtosecond laser processing as a convenient fabrication method for miniaturized structures provides an effective way to improve the performance of Si-based devices. However, the final-state analysis of femtosecond laser-induced Si micro-nano structures remains to be explored. In this study, the evolution of the micro-nano structures and the variation of surface and subsurface damage with pulse number were studied. Based on the atomic structure, the amorphous layer, dislocation layer, and unaffected layer were found. The amorphous layer resulted from the re-solidification of melted materials. The dislocation layer consisted of dislocations and lattice distortion. The unaffected layer retained the initial lattice structure and was not affected by laser irradiation. The high temperature and stress induced by multiple pulses led to the stacking faults and nano-twins in the subsurface layer. The evolution of the Si structure was essentially a transition process from a dislocation layer to a high-density defect layer and a transition process from nanotips to laser-induced periodic surface structures. During this process, dislocations dominated the femtosecond laser-induced microstructural deformation, affecting the nano-hardness of the irradiated surface. As a result, the nano-hardness of Si structures fabricated using femtosecond laser processing was maximally enhanced by 9.54%. This work provides new information about ultrafast laser-induced surface and subsurface damage, which is significant for the efficient and high-precision fabrication of Si-based functional micro-nano devices.

First-principles research on mechanism of sub-band absorption of amorphous silicon induced by ultrafast laser irradiation

Structures and absorption optical spectra of silicon cluster Si 9 via first-principles calculations

Direct observation and quantification of nanosecond laser induced amorphization inside silicon

Ultrafast Laser-Induced Black Silicon, from Micro-Nanostructuring, Infrared Absorption Mechanism, to High Performance Detecting Devices

Fabrication of Black Silicon with Thermostable Infrared Absorption by Femtosecond Laser

Combined Continuum-Atomistic Modeling of Ultrashort-Pulsed Laser Irradiation of Silicon

Direct fabrication of black Si with enhanced infrared transmittance using femtosecond laser irradiation

Strong Mid-Infrared Absorption and High Crystallinity of Microstructured Silicon Formed by Femtosecond Laser Irradiation in NF3 Atmosphere

Femtosecond laser fabrication of silicon surface microstructures for enhanced infrared radiation under electric drive

Mid-long wavelength infrared absorptance of hyperdoped silicon via femtosecond laser microstructuring

Extreme Sub-Wavelength Structure Formation from Mid-IR Femtosecond Laser Interaction with Silicon

Crystallinity and Sub-Band Gap Absorption of Femtosecond-Laser Hyperdoped Silicon Formed in Different N-Containing Gas Mixtures

Surface Morphology and Infrared Absorption of Silicon Irradiated by Picosecond Laser Pulses in Sf6

Pulsed Laser Heating-induced Surface Rapid Cooling and Amorphization

Formation of Si Nanocrystals in Glass by Femtosecond Laser Micromachining

Strong Infrared Photoluminescence from Black Silicon Made with Femtosecond Laser Irradiation

Reversible and irreversible photon-absorption in amorphous SiO 2 revealed by deep potential

Tuned ionic mobility by Ultrafast-laser pulses in Black Silicon

Broad band enhanced infrared light absorption of a femtosecond laser microstructured silicon

One-Step femtosecond laser irradiation of Single-Crystal Silicon: Evolution of Micro-Nano structures and damage investigation

Effect of Crystallographic Orientation on Structural Response of Silicon to Femtosecond Laser Irradiation