Abstract:Silicon, as one of the most essential semiconducting materials, is widely applied in various photodetection applications due to its high portability, convenient preparation, and compatibility with conventional complementary metal–oxide–semiconductor technology. Nowadays, black silicon, prepared by enforcing ultrafast laser micro-structuring and hyperdoping techniques, has received considerable attention for developing next-generation silicon photonics and silicon optoelectronics devices. In this work, high-comprehensive-property black silicon photodetectors with broadband spectral responsivity and high gain were achieved by femtosecond laser irradiation and titanium hyperdoping. The proposed device can respond to the incident light from 400 nm to at least 1550 nm, demonstrating a high responsivity of 40.59 A/W for 950 nm under the application of −5 V bias, and the corresponding detectivity can reach 3.61 × 10 12 cm·Hz 1/2 W −1 . Moreover, the fabricated photodetector exhibits a stable sub-bandgap photocurrent at 1550 nm, with an average responsivity of 3.42 mA/W by applying a −5 V bias. These improvements were achieved by the hyperdoping of titanium in silicon, which shows deep impurity levels, low electroactivity, and increased effective carrier lifetimes, as well as the formation of shallow n-i heterojunction and trapping centers induced by the femtosecond laser irradiation. Our work provides significant insights into the applications of black silicon in various optical-related fields, including weak and infrared photon detection, silicon photonic chips, remote sensing, and large-scale optoelectronic integration.

Direct fabrication of black Si with enhanced infrared transmittance using femtosecond laser irradiation

Ultrafast Laser-Induced Black Silicon, from Micro-Nanostructuring, Infrared Absorption Mechanism, to High Performance Detecting Devices

Broadband MSM photodetector based on S-doped black silicon fabricated by femtosecond laser

Fabrication of Black Silicon with Thermostable Infrared Absorption by Femtosecond Laser

Femtosecond laser fabrication of silicon surface microstructures for enhanced infrared radiation under electric drive

Large-Scale Wideband Light-Trapping Black Silicon Textured by Laser Inducing Assisted with Laser Cleaning in Ambient Air

Large-Scale Black Silicon Induced by Femtosecond Laser Assisted With Laser Cleaning

Femtosecond laser-induced black silicon: a dual application in photodetection and surface-enhanced Raman scattering

Black Silicon IR Photodiode Supersaturated with Nitrogen by Femtosecond Laser Irradiation

Sub-bandgap photo-response of black silicon fabricated by femtosecond laser irradiation under water

Strong Infrared Photoluminescence from Black Silicon Made with Femtosecond Laser Irradiation

Nanosecond laser annealing processed surface-structured hyperdoped silicon for efficient near-infrared detection

Broadband-Spectral-Responsivity of black silicon photodetector with high gain and sub-bandgap sensitivity by titanium hyperdoping

Black silicon for near-infrared and ultraviolet photodetection: A review

Great enhancement of infrared light absorption of silicon surface-structured by femtosecond laser pulses in N2 ambient

Black Silicon with Order-Disordered Structures for Enhanced Light Trapping and Photothermic Conversion

Sub-bandgap Photo-Response of Non-Doped Black-Silicon Fabricated by Nanosecond Laser Irradiation.

Black Silicon Photodetector with Excellent Comprehensive Properties by Rapid Thermal Annealing and Hydrogenated Surface Passivation

Sub-Bandgap Photo-Response of Chromium Hyperdoped Black Silicon Photodetector Fabricated by Femtosecond Laser Pulses

First-principles research on mechanism of sub-band absorption of amorphous silicon induced by ultrafast laser irradiation

The use of remote Femto Second technology in the preparation of black silicon material and optical devices