Abstract:A multi-wavelength measurement method for the high-temperature radiation properties of semi-transparent materials heated by high power laser and irradiated by the infrared source with alternating spectral distributions is introduced. The method avoids the strong dependence of existing methods on accurate temperature measurements or emissivity model of semi-transparent samples. The spectral emissivity, reflectance, transmittance and temperature of semi-transparent samples can be determined simultaneously. Furthermore, we established the experimental device, including a FTIR spectrometer (spectral range of 2.0∼16 μm), a 500 W 915 nm fiber laser, and an infrared SiC emitter irradiation source. The radiation properties of the oxidized stainless-steel sample (opaque materials) and n-type, phosphorous-doped silicon wafer sample (semi-transparent materials) were investigated experimentally at different temperatures (400∼800 °C). With the increase of laser power, the upper limit of sample temperature can be extended to higher temperatures. The measurement results show that the infrared spectral emissivity of stainless-steel increases with the increase of temperature. The spectral emissivity of semi-transparent n-type, phosphorous-doped silicon wafer increases with the increase of temperature, while the spectral directional-hemispherical reflectance decreases with the increase of temperature. The results of temperature and wavelength dependent emissivity of silicon wafer sample are consistent with the literatures, which verifies the applicability of the device. The research work provides a useful reference for measuring the high-temperature radiation properties of semi-transparent materials.

Greatly enhanced infrared normal spectral emissivity of microstructured silicon using a femtosecond laser

Infrared Light Absorption and Emissivity of Silicon Microstructured by Femtosecond Laser in SF6

Ultrahigh Infrared Normal Spectral Emissivity of Microstructured Silicon Coating Au Film.

Broad band enhanced infrared light absorption of a femtosecond laser microstructured silicon

Great enhancement of infrared light absorption of silicon surface-structured by femtosecond laser pulses in N2 ambient

Surface Morphology and Infrared Absorption of Silicon Irradiated by Picosecond Laser Pulses in Sf6

Femtosecond laser fabrication of silicon surface microstructures for enhanced infrared radiation under electric drive

Strong Mid-Infrared Absorption and High Crystallinity of Microstructured Silicon Formed by Femtosecond Laser Irradiation in NF3 Atmosphere

Thermal Diffusivity of Surface-Microstructured Silicon Measured by Photothermal Deflection Technique

Infrared Light Absorption of Silver Film Coated on the Surface of Femtosecond Laser Microstructured Silicon in Sf6

Comparison study of the femtosecond laser-induced surface structures on silicon at an elevated temperature.

Fabrication of Black Silicon with Thermostable Infrared Absorption by Femtosecond Laser

Iv-Vi Semiconductor Growth on Silicon Substrates and New Mid-Infrared Laser Fabrication Methods

Optically Pumped Mid-Infrared Light Emitter on Silicon

Direct fabrication of black Si with enhanced infrared transmittance using femtosecond laser irradiation

Laser microstructuring of Si surfaces for low-threshold field-electron emission

Near-Unity Below-Band-Gap Absorption by Microstructured Silicon

Nonvolatile Tunable Silicon-Carbide-based Midinfrared Thermal Emitter Enabled by Phase-Changing Materials.

Silicon micro-structuring using ultra-short laser pulses

Evidence of Silicon Band-Edge Emission Enhancement When Interfaced with SiO$_{2}$:Er Films

Measurements of spectral emissivity, reflectance and transmittance at high temperatures using laser heating and auxiliary light source