Abstract:The temperature dependency of femtosecond laser induced surface structures opens up a new scenario for studying ultrafast laser-mater interaction on the surface and a novel method for controlling the features of these structures. The shape and crystallinity of micro/nano surface structures created by femtosecond laser irradiation of n-type silicon (100) at elevated temperatures were compared in this study. Low spatial frequency laser induced periodic ripples structures (LSFL), micrometer-sized grooves, and spikes occur at room temperature as the number of pulses increases. At 400 °C, however, the grooves parallel to the polarization are the dominant structures, notwithstanding the presence of LSFL. As the temperature rises, the periodicities of LSFL increase, which we believe is due to a reduction in the oscillation of the surface plasmon polaritons due to the increased damping rate at higher temperatures. Furthermore, Raman spectra reveal that surface structures generated at 400 °C have higher crystallinity than those formed at 25 °C. Our simulations show that the better crystallinity at high temperatures is due to a slower resolidification velocity which is caused by a smaller temperature gradient and higher energy absorption. Our findings demonstrate that the features of femtosecond laser induced surface structures, such as periodicity and crystallinity, can be controlled by adjusting the substrate temperature simultaneously, paving the way for high crystallinity surface micro/nano-structures.

Thermal Diffusivity of Surface-Microstructured Silicon Measured by Photothermal Deflection Technique

Infrared Light Absorption and Emissivity of Silicon Microstructured by Femtosecond Laser in SF6

Surface Morphology and Infrared Absorption of Silicon Irradiated by Picosecond Laser Pulses in Sf6

Selected Two-Dimensional Effects in Gas Immersion Laser Doping of Unpatterned Silicon

Greatly enhanced infrared normal spectral emissivity of microstructured silicon using a femtosecond laser

Measurement of the Thermal Transport Properties of Dielectric Thin Films Using the Micro-Raman Method

Broad band enhanced infrared light absorption of a femtosecond laser microstructured silicon

Great enhancement of infrared light absorption of silicon surface-structured by femtosecond laser pulses in N2 ambient

Laser Induced Plasma in the Formation of Surface-Microstructured Silicon

Combined Continuum-Atomistic Modeling of Ultrashort-Pulsed Laser Irradiation of Silicon

Frequency-dependent photothermal measurement of transverse thermal diffusivity of organic semiconductors

Laser microstructuring of Si surfaces for low-threshold field-electron emission

Research On Thermal Conductivity Measurement Of Submicrometer-Scale Silicon Dioxide Film In Thermal Flow Sensor By Micro-Raman Technique

Effects of Black Silicon Surface Morphology Induced by a Femtosecond Laser on Absorptance and Photoelectric Response Efficiency

Comparison study of the femtosecond laser-induced surface structures on silicon at an elevated temperature.

Silicon micro-structuring using ultra-short laser pulses

Nanoscale laser flash measurements of diffuson transport in amorphous Ge and Si

Microscopic observation of strain induced in heteroepitaxial layers with reflection type of infrared polariscope

Strong Mid-Infrared Absorption and High Crystallinity of Microstructured Silicon Formed by Femtosecond Laser Irradiation in NF3 Atmosphere

Precision control of thermal transport in cryogenic single-crystal silicon devices

Dual-Wavelength Laser Flash Raman Spectroscopy Method for In-Situ Measurements of the Thermal Diffusivity: Principle and Experimental Verification