Abstract:Over four decades ago, pulsed-laser melting, or pulsed-laser annealing as it was termed at that time, was the subject of intense study as a potential advance in silicon device processing. In particular, it was found that nanosecond laser melting of the near-surface of silicon and subsequent liquid phase epitaxy could not only very effectively remove lattice disorder following ion implantation, but could achieve dopant electrical activities exceeding equilibrium solubility limits. However, when it was realised that solid phase annealing at longer time scales could achieve similar results, interest in pulsed-laser melting waned for over two decades as a processing method for silicon devices. With the emergence of flat panel displays in the 1990s, pulsed-laser melting was found to offer an attractive solution for large area crystallisation of amorphous silicon and dopant activation. This method gave improved thin film transistors used in the panel backplane to define the pixelation of displays. For this application, ultra-rapid pulsed laser melting remains the crystallisation method of choice since the heating is confined to the silicon thin film and the underlying glass or plastic substrates are protected from thermal degradation. This article will be organised chronologically, but treatment naturally divides into the two main topics: (1) an electrical doping research focus up until around 2000, and (2) optical doping as the research focus after that time. In the first part of this article, the early pulsed-laser annealing studies for electrical doping of silicon are reviewed, followed by the more recent use of pulsed-lasers for flat panel display fabrication. In terms of the second topic of this review, optical doping of silicon for efficient infrared light detection, this process requires deep level impurities to be introduced into the silicon lattice at high concentrations to form an intermediate band within the silicon bandgap. The chalcogen elements and then transition metals were investigated from the early 2000s since they can provide the required deep levels in silicon. However, their low solid solubilities necessitated ultra-rapid pulsed-laser melting to achieve supersaturation in silicon many orders of magnitude beyond the equilibrium solid solubility. Although infrared light absorption has been demonstrated using this approach, significant challenges were encountered in attempting to achieve efficient optical doping in such cases, or hyperdoping as it has been termed. Issues that limit this approach include: lateral and surface impurity segregation during solidification from the melt, leading to defective filaments throughout the doped layer; and poor efficiency of collection of photo-induced carriers necessary for the fabrication of photodetectors. The history and current status of optical hyperdoping of silicon with deep level impurities is reviewed in the second part of this article.

Selected Two-Dimensional Effects in Gas Immersion Laser Doping of Unpatterned Silicon

Laser microstructuring of Si surfaces for low-threshold field-electron emission

Excimer-laser-induced micropatterning of silicon dioxide on silicon substrates

Germanium Doping of Si Substrates for Improved Device Characteristics and Yield

Unified Model for Laser Doping of Silicon from Precursors

Combined Continuum-Atomistic Modeling of Ultrashort-Pulsed Laser Irradiation of Silicon

Electrical and Optical Doping of Silicon by Pulsed-Laser Melting

Thermodynamic Processes on a Semiconductor Surface During In‐situ Multi‐beam Laser Interference Patterning

Sub-damage-threshold plasma etching and profile tailoring of Si through laser-stimulated thermal desorption

Impact of surface reflectivity on the ultra-fast laser melting of silicon-germanium alloys

Effects of dopant type and concentration on the femtosecond laser ablation threshold and incubation behaviour of silicon

Fabrication of nitrogen-hyperdoped silicon by high-pressure gas immersion excimer laser doping

Evaporation and wetting behavior of water on the laser-textured silicon substrate

The influence of ultrafast temporal energy regulation on the morphology of Si surfaces through femtosecond double pulse laser irradiation

Numerical Investigation of the Kinetics of Non-Equilibrium Phase Transitions in Silicon Induced by an Ultra-Short Laser Pulse

The deposition of elements in the process of laser ablation of silicon

Inter-diffusion, melting and reaction interplay in Ni/4H-SiC under excimer laser annealing

Evolution of micro/nano-structural arrays on crystalline silicon carbide by femtosecond laser ablation

Separation of Mid-IR Light Trapping and Sulfur-Donor Absorption in Nanosecond-Laser Sulfur-Hyperdoped Silicon: a Way to Spatially- and Spectrally-Engineered Interband IR-Absorption

Pulsed Excimer Laser Crystallization and Doping for the Fabrication of Poly-Si and -SiGe TFTs

Laser Annealed SiO2/Si1-xGex Scaffolds for Nanoscaled Devices, Synergy of Experiment and Computation