Abstract:We review our progress on the laser processing of semiconductor microstructures and nanostructures for functional devices. Fundamental research conducted to understand the melt-mediated phase transformations induced by nanosecond laser irradiation in thin semiconductor films is presented. A detailed experimental study analyzed the physical mechanisms of the explosive crystallization in amorphous germanium that produces large area self-sustained crystal growth. The double laser crystallization method that combines a nanosecond laser pulse and a modulated microsecond laser beam was shown to produce ultra-large grain polycrystalline silicon, enabling fabrication of thin film transistor devices of high performance from amorphous silicon films. The crystal growth process was imaged by temporally resolved photography. Non-melt Excimer Laser annealing of thin silicon-on-insulator films for dopant activation was demonstrated. Applying multiple laser pulses below the melting threshold effected solid phase annealing of the single crystalline silicon films. Semiconductor nanowires are one-dimensional nanostructures that have displayed the potential to be used with low-cost flexible plastic substrates for applications such as large-area displays and sensor arrays. The excimer laser annealing of silicon nanowires is demonstrated as an alternative to conventional thermal annealing for dopant activation. The optical absorption of the nanowires is discussed and the effect of parameters such as fluence and number of pulses is investigated. The interaction of laser pulses with silicon nanowires is investigated through numerical simulations.[GRAPHICS](C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Impact of surface reflectivity on the ultra-fast laser melting of silicon-germanium alloys

Laser Annealed SiO2/Si1-xGex Scaffolds for Nanoscaled Devices, Synergy of Experiment and Computation

Atomistic insights into ultrafast SiGe nanoprocessing

Numerical Investigation of the Kinetics of Non-Equilibrium Phase Transitions in Silicon Induced by an Ultra-Short Laser Pulse

Inter-diffusion, melting and reaction interplay in Ni/4H-SiC under excimer laser annealing

Laser microstructuring of Si surfaces for low-threshold field-electron emission

An Experimental-Study on Laser Annealing of Thin Silicon Layers

Pulsed Laser Annealing of Semiconductor Structures for Functional Devices

Local Coordination Modulates the Reflectivity of Liquefied Si-Ge Alloys

In Situ and Ex Situ Diagnostics on Melting and Resolidification Dynamics of Amorphous and Polycrystalline Silicon Thin Films During Excimer Laser Annealing

A Heat Transfer Algorithm for the Laser-Induced Melting and Recrystallization of Thin Silicon Layers

Effects of Thermal Annealing on Femtosecond Laser Micromachined Glass Surfaces

Nanosecond Laser Annealing: impact on superconducting Silicon on Insulator epilayers

Molecular Dynamic Simulation of Non-Melt Laser Annealing Process

Ultrafast laser interaction with transparent multi-layer SiO2/Si3N4 films

Pulsed laser annealing for advanced technology nodes: Modeling and calibration

INTERPRETATION OF OPTICAL DIAGNOSTICS FOR THE ANALYSIS OF LASER CRYSTALLIZATION OF AMORPHOUS SILICON FILMS

Local Coordination Modulates the Reflectivity of Liquefied Si–Ge Alloys

Excimer Laser-Induced Temperature Field in Melting and Resolidification of Silicon Thin Films

Developing of nano sized fibrous eutectic silicon in hypereutectic Al–Si alloy by laser remelting

Heat Transfer and Phase Transformations in Laser Annealing of Thin a-Si Films