Abstract:We present an atomistic-continuum model to simulate ultrashort-pulse laser melting processes in semiconductor solids on the example of silicon. The kinetics of transient nonequilibrium phase transition mechanisms is addressed with a molecular dynamics method at atomic level, whereas the laser light absorption, strong generated electron-phonon nonequilibrium, fast diffusion of and heat conduction due to photoexcited free carriers are accounted for in the continuum. We give a detailed description of the model, which is then applied to study the mechanism of short laser pulse melting of freestanding Si films. The effect of laser-induced pressure and temperature of the lattice on the melting kinetics is investigated. Two competing melting mechanisms, heterogeneous and homogeneous, were identified. Apart from the classical heterogeneous melting mechanism, the nucleation of the liquid phase homogeneously inside the material significantly contributes to the melting process. The simulations showed, that due to the open diamond structure of the crystal, the laser-generated internal compressive stresses reduce the crystal stability against the homogeneous melting. Consequently, the latter can take a massive character within several picoseconds upon the laser heating. Due to the negative volume of melting of modeled Si material, −7.5%, the material contracts upon the phase transition, relaxes the compressive stresses, and the subsequent melting proceeds heterogeneously until the excess of thermal energy is consumed. The threshold fluence value, at which homogeneous nucleation of liquid starts contributing to the classical heterogeneous propagation of the solid-liquid interface, is found from the series of simulations at different laser input fluences. For the example of Si, the laser melting kinetics of semiconductors was found to be noticeably different from that of metals with a fcc crystal structure.

Molecular Dynamic Simulation of Non-Melt Laser Annealing Process

Pulsed Laser Annealing of Semiconductor Structures for Functional Devices

Combined Continuum-Atomistic Modeling of Ultrashort-Pulsed Laser Irradiation of Silicon

An Experimental-Study on Laser Annealing of Thin Silicon Layers

Numerical Investigation of the Kinetics of Non-Equilibrium Phase Transitions in Silicon Induced by an Ultra-Short Laser Pulse

Atomistic-continuum modeling of short laser pulse melting of Si targets

Heat Transfer and Phase Transformations in Laser Annealing of Thin a-Si Films

In Situ and Ex Situ Diagnostics on Melting and Resolidification Dynamics of Amorphous and Polycrystalline Silicon Thin Films During Excimer Laser Annealing

Pulsed laser annealing for advanced technology nodes: Modeling and calibration

Annealing and Quenching Effect in the Localized States Emission on Nanosilicon Fabricated by Pulsed Laser

Excimer Laser Annealing of Silicon Nanowires

Radiative Phenomena in CW Laser Annealing

Pulsed Laser Heating-induced Surface Rapid Cooling and Amorphization

In-situ Observation of Laser-induced Melting and Resolidification Dynamics of Si Thin Films

Study of recrystallization and activation processes in thin and highly doped silicon-on-insulator layers by nanosecond laser thermal annealing

On the Dynamic Behaviors of Silicon Single Crystal under Nanosecond Laser Irradiation

Millisecond pulse laser bending of silicon

Excimer Laser-Induced Temperature Field in Melting and Resolidification of Silicon Thin Films

Analysis of Energy Density and Scanning Speed Impacts on Ni/Sic Ohmic Contacts During Laser Annealing

Molecular dynamics studies of ultrafast laser-induced phase and structural change in crystalline silicon

Atomistic simulation of defects evolution in silicon during annealing after low energy self-ion implantation