Abstract:Scanning electron beam annealing techniques have been applied to the study of diffusion of implanted arsenic and boron difluoride. Electron beam anneals over the time range 0-180s (at Tmax), with peak temperatures in the range 1100-1200°C have been performed on uniformly implanted samples. Controlled slow cooling has been performed for some samples. Direct sample temperature measurements were made using a dual-colour pyrometer under control of a microcomputer, which provided data-logging and feedback control of temperature. The accurate temperature control achieved using this system is important for realistic diffusion modelling. Measurement of the resulting chemical and electrical dopant profiles, using SIMS, RBS and spreading resistance methodshas shown the presence of non-equilibrium diffusion at short times [6]. Channelling RBS studies used to investigate the activation and clustering behaviour of arsenic during the first stages of these very rapid anneals is reported. Modelling of the arsenic diffusion occuring for a range of implant doses subjected to these anneals has been performed,applying avariety of models, including a dynamic clustering model. This dynamic clustering model, based upon an equilibrium cluster model and a measured de-clustering rate, has been shown previously to give good agreementwith experiment. Forthese experiments, a modified de-clustering coefficient was needed to model the diffusion occuring for a wider range of arsenic implants. A solution of the Poisson equation for the internal electric field has also been incorporated. DLTS techniques have been used to study the defects remaining in diodes fabricated using these implagts andanneals. Trap densities of <5×1010cm−3 and leakages of <2×10−9 A.cm2 at −5V have been measured for the best devices, similar tothose observed for control furnace anneals.

Atomistic simulation of defects evolution in silicon during annealing after low energy self-ion implantation

Atomistic Investigations of Single-Crystal Silicon with Pre-Existing Defects

Defects in Ion Implantation and Annealing Studied by Atomistic Model

Evolution of secondary defects in arsenic implanted Si

J un 2 01 9 Ultraslow Dynamic Annealing of Neutron-induced Defects in n-type Silicon

The Role of Surface Annihilation in Annealing Investigated by Atomic Model Simulation

Transient Scanning Electron Beam Annealing Methods Used to Study Diffusion and Defects in Implanted Silicon

Physical model for surface annihilation of silicon interstitials during annealing

Atomistic simulation for shallow junction formation

Molecular dynamics simulation of silicon vacancy defects in silicon carbide by hydrogen ion implantation and subsequent annealing

A Study of Diffusion, Clustering and Defects in As+ and Bf2+ Implanted Silicon During Scanning Electron Beam Annealing.

Efficient atomistic method simuation on low energy doping and high temperature annealing technology

Simulation of Arsenic Diffusion During Rapid Thermal Annealing of Silicon Layers Doped with Low-Energy High-Dose Ion Implantation

Molecular Dynamic Simulation of Non-Melt Laser Annealing Process

Molecular Dynamics Study on Splitting of Hydrogen-Implanted Silicon in Smart-Cut® Technology

Studying shallow junction technology by atomistic modeling

Defects Evolution in N-Type 4H-Sic Induced by Electron Irradiation and Annealing

Ionization-induced annealing of pre-existing defects in silicon carbide

Measurement and Simulation of Ultra-Low-Energy Ion-Solid Interaction Dynamics

Direct simulation of ion beam induced stressing and amorphization of silicon

Modeling of long-term defect evolution in heavy-ion irradiated 3C-SiC: Mechanism for thermal annealing and influences of spatial correlation