Abstract:Scanning electron beam annealing techniques have been applied to the study of diffusion of implanted arsenic and boron difluoride. Electron beam anneals over the time range 0-180s (at Tmax), with peak temperatures in the range 1100-1200°C have been performed on uniformly implanted samples. Controlled slow cooling has been performed for some samples. Direct sample temperature measurements were made using a dual-colour pyrometer under control of a microcomputer, which provided data-logging and feedback control of temperature. The accurate temperature control achieved using this system is important for realistic diffusion modelling. Measurement of the resulting chemical and electrical dopant profiles, using SIMS, RBS and spreading resistance methodshas shown the presence of non-equilibrium diffusion at short times [6]. Channelling RBS studies used to investigate the activation and clustering behaviour of arsenic during the first stages of these very rapid anneals is reported. Modelling of the arsenic diffusion occuring for a range of implant doses subjected to these anneals has been performed,applying avariety of models, including a dynamic clustering model. This dynamic clustering model, based upon an equilibrium cluster model and a measured de-clustering rate, has been shown previously to give good agreementwith experiment. Forthese experiments, a modified de-clustering coefficient was needed to model the diffusion occuring for a wider range of arsenic implants. A solution of the Poisson equation for the internal electric field has also been incorporated. DLTS techniques have been used to study the defects remaining in diodes fabricated using these implagts andanneals. Trap densities of <5×1010cm−3 and leakages of <2×10−9 A.cm2 at −5V have been measured for the best devices, similar tothose observed for control furnace anneals.

Simulation of Arsenic Diffusion During Rapid Thermal Annealing of Silicon Layers Doped with Low-Energy High-Dose Ion Implantation

Analytical Modeling of Nonlinear Diffusion of Arsenic in Silicon

A Study of Diffusion, Clustering and Defects in As+ and Bf2+ Implanted Silicon During Scanning Electron Beam Annealing.

Transient Scanning Electron Beam Annealing Methods Used to Study Diffusion and Defects in Implanted Silicon

Interstitial diffusion of arsenic in silicon

Evolution of secondary defects in arsenic implanted Si

Simulation of interstitial diffusion of ion-implanted boron

Modeling Uphill Diffusion of Mg Implants in Gaas Using Suprem-Iv

Simulation of boron diffusion during low-temperature annealing of implanted silicon

Atomistic simulation of defects evolution in silicon during annealing after low energy self-ion implantation

Implantation-dominated Junction Depths of Low-Temperature and Electron-Beam-annealed As Source—drain Regions

Defects in Ion Implantation and Annealing Studied by Atomistic Model

Investigation of the Doping Profile for Ion Implants and Rapid Annealing in Silicon Via an Improved Method

J un 2 01 9 Ultraslow Dynamic Annealing of Neutron-induced Defects in n-type Silicon

Threshold Shift of NMOS Transistors Due to High Energy Arsenic Source/drain Implantation

Mechanisms of arsenic clustering in silicon

Simulation of the Void Shape Evolution of High-Temperature Annealed Silicon Structures by means of a Custom Level-Set Formulation

Interstitial diffusion of ion-implanted boron in crystalline silicon

Influence of High Dose As Ion Implantation on Electrical Properties of High Resistivity Silicon

Efficient atomistic method simuation on low energy doping and high temperature annealing technology

Atomistic simulation for shallow junction formation