Abstract:Scanning electron beam annealing techniques have been applied to the study of diffusion of implanted arsenic and boron difluoride. Electron beam anneals over the time range 0-180s (at Tmax), with peak temperatures in the range 1100-1200°C have been performed on uniformly implanted samples. Controlled slow cooling has been performed for some samples. Direct sample temperature measurements were made using a dual-colour pyrometer under control of a microcomputer, which provided data-logging and feedback control of temperature. The accurate temperature control achieved using this system is important for realistic diffusion modelling. Measurement of the resulting chemical and electrical dopant profiles, using SIMS, RBS and spreading resistance methodshas shown the presence of non-equilibrium diffusion at short times [6]. Channelling RBS studies used to investigate the activation and clustering behaviour of arsenic during the first stages of these very rapid anneals is reported. Modelling of the arsenic diffusion occuring for a range of implant doses subjected to these anneals has been performed,applying avariety of models, including a dynamic clustering model. This dynamic clustering model, based upon an equilibrium cluster model and a measured de-clustering rate, has been shown previously to give good agreementwith experiment. Forthese experiments, a modified de-clustering coefficient was needed to model the diffusion occuring for a wider range of arsenic implants. A solution of the Poisson equation for the internal electric field has also been incorporated. DLTS techniques have been used to study the defects remaining in diodes fabricated using these implagts andanneals. Trap densities of <5×1010cm−3 and leakages of <2×10−9 A.cm2 at −5V have been measured for the best devices, similar tothose observed for control furnace anneals.

Investigation of the Doping Profile for Ion Implants and Rapid Annealing in Silicon Via an Improved Method

Transient Scanning Electron Beam Annealing Methods Used to Study Diffusion and Defects in Implanted Silicon

Characterizations on the Doping of Single-Crystal Silicon Carbide

A Study of Diffusion, Clustering and Defects in As+ and Bf2+ Implanted Silicon During Scanning Electron Beam Annealing.

Influence of High Dose As Ion Implantation on Electrical Properties of High Resistivity Silicon

Direct observation of the distribution of impurity in phosphorous/boron co-doped Si nanocrystals

Differential Nonlinear Photocarrier Radiometry for Characterizing Ultra-Low Energy Boron Implantation in Silicon

First Principles Study on Phosphorus or Boron Doping in Si Nanocrystals with Various Sizes Embedded in SiO2 Matrix

Research on dopant distribution of multi-energy boron implantations into c-SiC

Evolution of secondary defects in arsenic implanted Si

Rapid-Thermal-Processing-Based Intrinsic Gettering For Nitrogen-Doped Czochralski Silicon

Simulation of Arsenic Diffusion During Rapid Thermal Annealing of Silicon Layers Doped with Low-Energy High-Dose Ion Implantation

Deep level transient spectroscopy study for the development of ion-implanted silicon field-effect transistors for spin-dependent transport

Modeling and Simulation of the Ion Implantation Metrology Based on Pump-Probe Technology

Experimental characterization of two‐dimensional dopant profiles in silicon using chemical staining

Ion Doping of Silicon Carbide in the Technology of High-Power Electronic Devices (Review)

Simulation on Boron Concentration Profile in Silicon Introduced by Plasma Doping

Systematic Investigations on Doping Dependent Thermal Transport Properties of Single Crystal Silicon by Time-Domain Thermoreflectance Measurements

Mineral Interface Doping: Hydroxyapatite Deposited on Silicon to Trigger the Electronic Properties

Study on the influence of doping process on resistance of semiconductor bridge region

Efficient atomistic method simuation on low energy doping and high temperature annealing technology