Abstract:Due to its intriguingly electrical, thermal and optical characteristics, single-crystal silicon carbide (SiC), one of the most significant wide-bandgap semiconductors, has been receiving intense attention. Up to date, SiC has been investigated for applications in high-power and high-frequency electronics, ultraviolet optoelectronics and quantum computing, which all critically have a strict requirement on the doping of SiC. To improve the quality and reliability of SiC devices, the amounts of both intentionally and unintentionally doped impurities as well as the doping-dependent characteristics like resistivity must be characterized with accuracy and convenience. This article reviews these characterization methods, including elemental analysis, electrical and optical methods. Among those, the term “elemental analysis” dominantly introduces the secondary ion mass spectroscopy technique (SIMS). Meanwhile, for the electrical methods, we will discuss the mature techniques used in laboratory including the Hall effect method, the electrical scanning probe techniques, etc. Moreover, the optical methods introduce the optical absorption method, Raman spectra analysis and photoluminescence spectroscopy. Additionally, a focus is placed specifically on the characterization of the carrier concentration distribution in SiC wafer, which meets the practical requirement for in situ diagnostics of SiC wafers.

Simulation on Boron Concentration Profile in Silicon Introduced by Plasma Doping

Simulation on Plasma Doping for Shallow Junction Formation

Simulation of Plasma Doping Process by Using the Localized Molecular Dynamics Method

Ultra-Shallow Doping B, Mg, Ni, Cu, Mn, Cr and Fe into SiC with Very High Surface Concentrations Based on Plasma Stimulated Room-Temperature Diffusion

Boron- and Phosphorus-Hyperdoped Silicon Nanocrystals

Characterizations on the Doping of Single-Crystal Silicon Carbide

Direct observation of the distribution of impurity in phosphorous/boron co-doped Si nanocrystals

Influence of Boron-doping on Electrical Properties of Na-Si:H Thin Film Prepared by PECVD

Ab Initio Molecular Dynamics Simulation Study on Phosphorus/Boron Co-Doped Si Nanocrystals/SiO2 Core/Shell Structures

Density Functional Theory Study on the B Doping and B/P Codoping of Si Nanocrystals Embedded in SiO2

First Principles Study on Phosphorus or Boron Doping in Si Nanocrystals with Various Sizes Embedded in SiO2 Matrix

Investigation of the Doping Profile for Ion Implants and Rapid Annealing in Silicon Via an Improved Method

Room-temperature Plasma Doping Without Bias Power for Introduction of Fe, Au, Al, Ga, Sn and in into Si

Hyperdoped silicon: Processing, properties, and devices

Simulation and Experimental Verification of Silicon Dioxide Deposition by PECVD

Molecular Dynamic Simulation on Boron Cluster Implantation for Shallow Junction Formation

Research on dopant distribution of multi-energy boron implantations into c-SiC

Efficient atomistic method simuation on low energy doping and high temperature annealing technology

Growth and Characterization of Boron Delta-Function Shaped Doping Layer in Silicon by Molecular Beam Epitaxy

A molecular dynamic simulation on boron monomer and boron cluster implantation under line edge roughness

Poly-Si passivating contacts prepared via phosphorus spin-on-doping: A comparison between different silicon deposition methods