Abstract:Plasma processing is the key advanced semiconductor production, enabling precise etching and integrating thin, silicon‐like 2D materials like transition metal dichalcogenides. Computational simulations guide synthesis and etching, optimizing processes for electronic applications. This technology is essential for miniaturizing semiconductors and efficient film deposition. The technique of plasma processing is beneficial for wafer cleaning and precision etching of integrated circuits and essential in manufacture of advanced semiconductor devices with unmatched perfection. Research on two‐dimensional (2D) materials, such as transition metal dichalcogenides(TMDs), offers a promising solution to the challenges in semiconductor miniaturization. TMDs, with their atomic layer thicknesses and silicon‐like bandgaps, can be integrated using existing plasma systems. Different 2D crystal structures, such as 1T and 2H configurations, exhibit distinctive properties. Computational approaches are also developed to provide guidelines for controlled synthesis and etching of large‐scale and high‐quality 2D materials. Plasma/gas‐surface interactions during the synthesis, etching, and phase transformation of 2D materials are explored using atomistic simulations such as density functional theory and molecular dynamics. The reaction energetics, chemical species, and associated kinetics are discovered in the simulation study. These results decipher various mechanisms of 2D materials processing at the microscopic scale and predict certain optimal process parameters. Plasma/gas‐based semiconductor technologies are crucial in electronics because they enable production of advanced semiconductors. Plasma/gas etching allows precise and selective removal of material and plasma‐enhanced chemical vapor deposition enhances chemical reactions for efficient film deposition; therefore, these processes are majorly important for harnessing 2D materials in electronic applications.

Simulation on Plasma Doping for Shallow Junction Formation

Simulation on Boron Concentration Profile in Silicon Introduced by Plasma Doping

Simulation of Plasma Doping Process by Using the Localized Molecular Dynamics Method

Efficient atomistic method simuation on low energy doping and high temperature annealing technology

Plasma Treatment of Ultrathin Layered Semiconductors for Electronic Device Applications

Electrochemical Capacitance-Voltage Characterization of Plasma-Doped Ultra-Shallow Junctions

Simulation of Hollow-Cathode-nitriding Plasma and Design of Diffusion Equipment with DC and RF Dual Discharge

Studying shallow junction technology by atomistic modeling

Ultra-Shallow Doping B, Mg, Ni, Cu, Mn, Cr and Fe into SiC with Very High Surface Concentrations Based on Plasma Stimulated Room-Temperature Diffusion

Simulation and Experimental Verification of Silicon Dioxide Deposition by PECVD

High Performance Ge Ultra-Shallow Junctions Fabricated by A Novel Formation Technique Featuring Spin-On Dopant and Laser Annealing for Sub-10 Nm Technology Applications

Doping-Less Tunnel Field Effect Transistor: Design and Investigation

Room-temperature Plasma Doping Without Bias Power for Introduction of Fe, Au, Al, Ga, Sn and in into Si

Differential Hall Profiling of Ultra-Shallow Junctions Formed by Plasma Doping and Ion Implantation

High-Performance Two-Dimensional Electronics with a Noncontact Remote Doping Method

FinFET Doping with PSG/BSG Glass Mimic Doping by Ultra Low Energy Ion Implantation

Ultra-shallow Junction Used in Nano Devices and Development of Related Ion-doping Techniques

Numerical Simulation of Transient Multiphase Field During Hybrid Plasma-Laser Deposition Manufacturing

Simulation on Advanced Shallow Junction Technology with Atomistic Method

Three-Dimensional Simulation of Total Dose Effects on Ultra-Deep Submicron Devices

Plasma and Gas‐based Semiconductor Technologies for 2D Materials with Computational Simulation & Electronic Applications