Abstract:Ion implantation is a crucial process in the fabrication of semiconductor devices, but accurately predicting the impurities distribution in the low energy range is still challenging. The widely used method to simulate this process is molecular dynamics with recoil interaction approximation (RIA-MD), which uses the translational method to replace traditional periodic boundary conditions. However, this approach leads to accuracy loss due to the simplification of atom-atom interactions and bulk crystal properties. Our study presents a method to simulate the impurity distribution after ion implantation at low energy, which combines all-electron density-functional theory (DFT) and full molecular dynamics (MD). Unlike the RIA-MD method, DFT-MD method calculates the movements of all energetic ions and simulates the whole bulk crystal properties. Thus, it provides a more realistic representation of atom-atom interactions. We used not only the experimental values reported by references but also the experimental value measured by actual ion implantation technology samples. This enabled us to make a more accurate comparison between the DFT-MD and RIA-MD methods. Specifically, the dopant profiles and amorphous thickness obtained using the DFT-MD method were found to be in good agreement with experimental data. These findings demonstrate the effectiveness of our method and highlight its potential to advance the field of ion implantation simulation. Moreover, our method has the potential to be useful in developing atomic-scale technology computer-aided design (TCAD) tools, as well as in other fields of research that require accurate ion implantation simulations.

Efficient atomistic method simuation on low energy doping and high temperature annealing technology

Studying shallow junction technology by atomistic modeling

Simulation on Advanced Shallow Junction Technology with Atomistic Method

Atomistic simulation for shallow junction formation

Defects in Ion Implantation and Annealing Studied by Atomistic Model

Molecular Dynamic Simulation on Boron Cluster Implantation for Shallow Junction Formation

Atomistic Annealing Simulation: Kinetic Lattice Monte Carlo

Simulating Enhanced Diffusion and Activation of Boron by Atomistic Model

Computer Simulation On Low Energy Ion Implantation Based On Molecular Dynamics Methods

Atomistic simulation of defects evolution in silicon during annealing after low energy self-ion implantation

Measurement and Simulation of Ultra-Low-Energy Ion-Solid Interaction Dynamics

Implantation-dominated Junction Depths of Low-Temperature and Electron-Beam-annealed As Source—drain Regions

The Role of Surface Annihilation in Annealing Investigated by Atomic Model Simulation

Improving the Accuracy of Ion Implantation Simulations Through the Use of DFT-MD Methodology

A New Simulation Method of Ion Implantation

Precise simulation on ultra-low energy ion implantation by Molecular Dynamic approach with proper interaction model

Atomistic Simulation of RTA Annealing for Shallow Junction Formation Characterizing Both BED and TED

Transient Scanning Electron Beam Annealing Methods Used to Study Diffusion and Defects in Implanted Silicon

Adaptive Simulation for Single-Electron Devices

Molecular Dynamics Study on Size Dependence of Cluster Implantation with Consideration of Varied Low Incident Energies

Simulation on Plasma Doping for Shallow Junction Formation