Abstract:Scanning electron beam annealing techniques have been applied to the study of diffusion of implanted arsenic and boron difluoride. Electron beam anneals over the time range 0-180s (at Tmax), with peak temperatures in the range 1100-1200°C have been performed on uniformly implanted samples. Controlled slow cooling has been performed for some samples. Direct sample temperature measurements were made using a dual-colour pyrometer under control of a microcomputer, which provided data-logging and feedback control of temperature. The accurate temperature control achieved using this system is important for realistic diffusion modelling. Measurement of the resulting chemical and electrical dopant profiles, using SIMS, RBS and spreading resistance methodshas shown the presence of non-equilibrium diffusion at short times [6]. Channelling RBS studies used to investigate the activation and clustering behaviour of arsenic during the first stages of these very rapid anneals is reported. Modelling of the arsenic diffusion occuring for a range of implant doses subjected to these anneals has been performed,applying avariety of models, including a dynamic clustering model. This dynamic clustering model, based upon an equilibrium cluster model and a measured de-clustering rate, has been shown previously to give good agreementwith experiment. Forthese experiments, a modified de-clustering coefficient was needed to model the diffusion occuring for a wider range of arsenic implants. A solution of the Poisson equation for the internal electric field has also been incorporated. DLTS techniques have been used to study the defects remaining in diodes fabricated using these implagts andanneals. Trap densities of <5×1010cm−3 and leakages of <2×10−9 A.cm2 at −5V have been measured for the best devices, similar tothose observed for control furnace anneals.

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Atomistic simulation for shallow junction formation

Atomistic Annealing Simulation: Kinetic Lattice Monte Carlo

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The Role of Surface Annihilation in Annealing Investigated by Atomic Model Simulation

Simulation on Advanced Shallow Junction Technology with Atomistic Method

Studying shallow junction technology by atomistic modeling

Simulating Enhanced Diffusion and Activation of Boron by Atomistic Model

Transient Scanning Electron Beam Annealing Methods Used to Study Diffusion and Defects in Implanted Silicon

Transmission Electron Microscopy Investigation of the Micro-Defects in Czochralski Silicon

Efficient atomistic method simuation on low energy doping and high temperature annealing technology

A Study of Diffusion, Clustering and Defects in As+ and Bf2+ Implanted Silicon During Scanning Electron Beam Annealing.

Atomistic simulation of defects evolution in silicon during annealing after low energy self-ion implantation

Simulation of Arsenic Diffusion During Rapid Thermal Annealing of Silicon Layers Doped with Low-Energy High-Dose Ion Implantation

2D Modeling of the Annealing Process after Ion Implantation in N-on-p HgCdTe

Implantation-dominated Junction Depths of Low-Temperature and Electron-Beam-annealed As Source—drain Regions

Simulation of defect evolution in tungsten during annealing by developing a vacancy and interstitial-type defect evolution model

Individual cascade annealing in BCC tungsten: effects of size and spatial distributions of defects

Simulation of Boron Diffusion during Annealing of Silicon Substrates Undergone a High Fluence Ion Implantation

Ultra-shallow junction formation using conventional ion implantation and rapid thermal annealing

Boron Ultrashallow Junction Formation in Silicon by Low‐Energy Implantation and Rapid Thermal Annealing in Inert and Oxidizing Ambient