Abstract:Scanning electron beam annealing techniques have been applied to the study of diffusion of implanted arsenic and boron difluoride. Electron beam anneals over the time range 0-180s (at Tmax), with peak temperatures in the range 1100-1200°C have been performed on uniformly implanted samples. Controlled slow cooling has been performed for some samples. Direct sample temperature measurements were made using a dual-colour pyrometer under control of a microcomputer, which provided data-logging and feedback control of temperature. The accurate temperature control achieved using this system is important for realistic diffusion modelling. Measurement of the resulting chemical and electrical dopant profiles, using SIMS, RBS and spreading resistance methodshas shown the presence of non-equilibrium diffusion at short times [6]. Channelling RBS studies used to investigate the activation and clustering behaviour of arsenic during the first stages of these very rapid anneals is reported. Modelling of the arsenic diffusion occuring for a range of implant doses subjected to these anneals has been performed,applying avariety of models, including a dynamic clustering model. This dynamic clustering model, based upon an equilibrium cluster model and a measured de-clustering rate, has been shown previously to give good agreementwith experiment. Forthese experiments, a modified de-clustering coefficient was needed to model the diffusion occuring for a wider range of arsenic implants. A solution of the Poisson equation for the internal electric field has also been incorporated. DLTS techniques have been used to study the defects remaining in diodes fabricated using these implagts andanneals. Trap densities of <5×1010cm−3 and leakages of <2×10−9 A.cm2 at −5V have been measured for the best devices, similar tothose observed for control furnace anneals.

Ultra-shallow junction formation using conventional ion implantation and rapid thermal annealing

Implantation-dominated Junction Depths of Low-Temperature and Electron-Beam-annealed As Source—drain Regions

High Performance Ge Ultra-Shallow Junctions Fabricated by A Novel Formation Technique Featuring Spin-On Dopant and Laser Annealing for Sub-10 Nm Technology Applications

Transient Scanning Electron Beam Annealing Methods Used to Study Diffusion and Defects in Implanted Silicon

Ultra-shallow Junctions Formed Using Microwave Annealing

Boron Ultrashallow Junction Formation in Silicon by Low‐Energy Implantation and Rapid Thermal Annealing in Inert and Oxidizing Ambient

n‐LDD Ultra‐Shallow Extension Formation Using Cold and Carbon Ion Implantation

Measurement and Simulation of Ultra-Low-Energy Ion-Solid Interaction Dynamics

Wafer-Scale, Sub-5 nm Junction Formation by Monolayer Doping and Conventional Spike Annealing

Atomistic simulation for shallow junction formation

A Study of Diffusion, Clustering and Defects in As+ and Bf2+ Implanted Silicon During Scanning Electron Beam Annealing.

Formation of ultra-shallow junctions with pre-amorphization implant and microwave annealing

Studying shallow junction technology by atomistic modeling

Efficient atomistic method simuation on low energy doping and high temperature annealing technology

Reduction Of Junction Leakage Current In Sub-10 Nm Ultra-Shallow Nige/N-Ge Schottky Junctions By Dopant Segregation

Formation of Shallow Junctions during Rapid Thermal Processing from Electron‐Beam Deposited Boron Sources

Ultra-shallow Junction Used in Nano Devices and Development of Related Ion-doping Techniques

Atomistic Simulation of RTA Annealing for Shallow Junction Formation Characterizing Both BED and TED

Influence of High Dose As Ion Implantation on Electrical Properties of High Resistivity Silicon

Schottky Barrier Height Tuning Via The Dopant Segregation Technique Through Low-Temperature Microwave Annealing