Abstract:Ultrashallow elevated n(+)/p junctions (similar to 75 nm) incorporating selectively deposited epitaxial silicon layers were fabricated. The undoped epi layers (similar to 100 nm) were deposited on exposed diffusion areas in an Advanced Semiconductor Material Epsilon I system specifically designed for low thermal budget single-wafer processing. Shallow junctions (similar to 75 nm) were formed by ion implantation (As, 4 x 10(15)/cm(2), 80 keV) into undoped epi layers and out-diffusion into the underlying substrate. Alternatively, an ion implanted (As, 4 x 10(15)/cm(2), 60 keV) elevated layer was utilized to contact a shallow junction, which was formed (As, 1.5 x 10(15)/cm(3), 15 keV) before the epi deposition All junctions were annealed at 950 degrees C for 10 s. Nonsilicided elevated junctions and conventional nonelevated (As, 1.5 x 10(15)/cm(2), 15 keV) ones displayed very similar junction characteristics. Silicided nonelevated ultrashallow junctions, however, showed large reverse leakage current due to the substrate consumption. Both silicided elevated (post-epi and pre-epi) junctions exhibited excellent forward characteristics and low reverse leakage current. The difference in the reverse leakage characteristics of these two elevated junctions was attributed to the epi faceting formed at the sidewall edge of localized oxidation of silicon isolation. Deep submicron n = channel metal oxide semiconductor field effect transistors incorporating these junctions were also fabricated and electrically tested. Both elevated source/drain (S/D) devices show superior current driving capability compared to nonelevated ones as a result of much reduced parasitic resistance from contact source/drain junctions.

Reduction Of Junction Leakage Current In Sub-10 Nm Ultra-Shallow Nige/N-Ge Schottky Junctions By Dopant Segregation

Reduction of Junction Leakage Current in Sub-10 Nm Ultra-Shallow NiGe/n-Ge Schottky Junctions by Dopant Segregation

High Performance Ge Ultra-Shallow Junctions Fabricated by A Novel Formation Technique Featuring Spin-On Dopant and Laser Annealing for Sub-10 Nm Technology Applications

Thermal Stability Enhancement of NiGe Metal Source/Drain and Ge Pmosfets by Dopant Segregation

Nige Metal Source/Drain Ge Pmosfets For Future High Performance Vlsi Circuits Applications

Ge Complementary Tunneling Field-Effect Transistors Featuring Dopant Segregated NiGe Source/Drain

Study of the Leakage Current Mechanism in Schottky Contacts to Al0.25Ga0.75N/GaN Heterostructures with AlN Interlayers

High-Performance Germanium pMOSFETs With NiGe Metal Source/Drain Fabricated by Microwave Annealing

Low Electron Schottky Barrier Height of NiGe/Ge Achieved by Ion Implantation After Germanidation Technique

Effect of AlN interlayer thickness on leakage currents in Schottky contacts to Alo.25Gao.75N/AlN/GaN heterostructures

Comparative Study of Dopant-Segregated Schottky Barrier Germanium Nanowire Transistors

Study on Schottky Barrier Modulation of NiGe/Ge by Ion-Implantation after Germanidation Technique

Effective Schottky Barrier Lowering in Silicon-on-insulator Schottky-barrier Metal-Oxide-semiconductor Field-Effect Transistors Using Dopant Segregation

High-Performance Germanium N(+)/P Junction by Nickel-Induced Dopant Activation of Implanted Phosphorus at Low Temperature

Schottky Barrier Height Modulation of Nickel Germanide Schottky Diodes by the Germanidation-Induced Dopant Segregation Technique

The Leakage Current Improvement of a Ni-Silicided SiGe/Si Junction Using a Si Cap Layer and the PAI Technique

A Comparative Study of N+/p Junction Formation for Deep Submicron Elevated Source/Drain Metal Oxide Semiconductor Field Effect Transistors

Germanium N(+)/P Shallow Junction with Record Rectification Ratio Formed by Low-Temperature Preannealing and Excimer Laser Annealing

Reducing the reverse leakage current of AlGaN/GaN heterostructures <i>via</i> low-fluence neutron irradiation

Dark-Current Suppression in Metal–Germanium–Metal Photodetectors Through Dopant-Segregation in NiGe—Schottky Barrier

Design and Realization of GaN Trench Junction-Barrier-Schottky-Diodes