Abstract:Germanium based metal oxide semiconductor (MOS) device has been a research hotspot and considered as a potential candidate for future complementary MOS (CMOS) technology due to its high and symmetric carrier mobility. However, the poor quality of gate dielectric/channel interface significantly restricts the performances of germanium based MOS devices. Besides, the solid-solubility and activation concentration of dopants in Ge are both quite low, and the dopants diffuse fast in Ge, which makes it difficult to achieve ultra-shallow junction with high dopant concentration, especially for Ge NMOS devices.To solve these problems, different techniques are proposed and overviewed. The proposed nitrogen-plasma-passivation method can effectively suppress the regrowth of germanium sub-oxide and reduce the interface state density. Thus the performance of the fabricated Ge NMOS device is significantly improved. To enhance the n-type dopant activation in Ge, the multiple implantation technique and the multiple annealing technique are proposed. High electrical activation over 1 1020 cm-3 is achieved, and the corresponding contact resistivity is reduced to 3.8 10-7 cm2. Besides, the implantation after germanide (IAG) technique is first proposed to modulate the Schottky barrier height (SBH). The record-low electron SBH of 0.10 eV is obtained by IAG technique, and the optimized process window is given. In addition, the poor thermal stability of NiGe restricts the further improvement in performance of Ge MOS device. P and Sb co-implantation technique and novel ammonium fluoride pretreatment method are proposed to improve the thermal stability of NiGe. The electrical characteristic of NiGe/Ge diode is also improved simultaneously. The results provide the guidelines for further enhancing the performances of germanium-based MOS devices.

Low Electron Schottky Barrier Height of NiGe/Ge Achieved by Ion Implantation After Germanidation Technique

Study on Schottky Barrier Modulation of NiGe/Ge by Ion-Implantation after Germanidation Technique

Tuning of the Schottky Barrier Height in Nige/N-Ge Using Ion-Implantation after Germanidation Technique

Impact of ion implantation on nickel germanides formation with pure-Ge substrate and the electrical dependence of NiGe/Ge schottky diode on contact size

Low specific contact resistivity to n-Ge and well-behaved Ge n+ p diode achieved by multiple implantation and multiple annealing technique

Schottky Barrier Height Modulation of Nickel Germanide Schottky Diodes by the Germanidation-Induced Dopant Segregation Technique

Reduction of Junction Leakage Current in Sub-10 Nm Ultra-Shallow NiGe/n-Ge Schottky Junctions by Dopant Segregation

Morphology and Electrical Performance Improvement of NiGe/Ge Contact by P and Sb Co-implantation

High-Performance Germanium pMOSFETs With NiGe Metal Source/Drain Fabricated by Microwave Annealing

Fabrication and Characteristics of Ni-Germanide Schottky Contacts with Ge

Ge CMOS Technology with Advanced Interface and Junction Engineering.

Schottky Contact Properties of Ni/n-poly-Si0.87Ge0.13/n-Si(100) Heterostructure

Direct-Bandgap Electroluminescence from Germanium with Subband Engineering Utilizing a Metal-Oxide-Semiconductor Structure

Nige Metal Source/Drain Ge Pmosfets For Future High Performance Vlsi Circuits Applications

High Performance Ge Ultra-Shallow Junctions Fabricated by A Novel Formation Technique Featuring Spin-On Dopant and Laser Annealing for Sub-10 Nm Technology Applications

NI Germanide Schottky contact with GE

N+/P Shallow Junction with High Dopant Activation and Low Contact Resistivity Fabricated by Solid Phase Epitaxy Method for Ge Technology

Ge Complementary Tunneling Field-Effect Transistors Featuring Dopant Segregated NiGe Source/Drain

Research Progress of High Mobility Germanium Based Metal Oxide Semiconductor Devices

Physical mechanism determining Ge p- and n-MOSFETs mobility in high Ns region and mobility improvement by atomically flat GeOx/Ge interfaces