Abstract:The material and electrical characterization of nickel germanides on pure n-(100) Ge are investigated in this paper. The nickel germanides were achieved by rapid thermal annealing (RTA) in N2 ambient for 60s at different temperature. And X-ray diffraction (XRD) and Raman measurements were used to determine the crystal phase of Ni germanides. The results show that the ion implantation of BF2 before germanidation is favorable for the formation of low-resistivity monogermanide phase (NiGe). Ni-rich germanide phase exists when annealed at 300°C for pure-Ge without BF2 implantation, while only NiGe is formed for that with BF2 implantation. As a result, the sheet resistance of the film annealed at 300°C is ∼9.6Ω/□ and ∼3.8Ω/□ for the samples without/with BF2 implantation, respectively. Besides, we firstly observed the Raman peak at ∼217cm-1 corresponding to NiGe, which has not been reported till now. In addition, it is also experimentally demonstrated that the Ti-capping layer technique is beneficial to better surface morphology. Furthermore, the electrical characteristics of NiGe/pure-Ge Schottky diodes is presented. The strong dependence of Schottky barrier height (Φb) and the ideality factor (n) on the contact hole size is also firstly observed through the experiments. When annealed at 400°C, the Schottky barrier height (Φb) of Schottky diodes formed on pure-Ge substrate decreases from 0.53eV to 0.42eV with the contact size decreasing, while the ideality factor(n) increases remarkably, which may provide the guideline for the application to Schottky source/drain germanium transistors.

NI Germanide Schottky contact with GE

Fabrication and Characteristics of Ni-Germanide Schottky Contacts with Ge

Studies of Ti- and Ni-Germanide Schottky Contacts on N-Ge(100) Substrates

Impact of ion implantation on nickel germanides formation with pure-Ge substrate and the electrical dependence of NiGe/Ge schottky diode on contact size

Schottky Contact Properties of Ni/n-poly-Si0.87Ge0.13/n-Si(100) Heterostructure

Study on Schottky Barrier Modulation of NiGe/Ge by Ion-Implantation after Germanidation Technique

Low Electron Schottky Barrier Height of NiGe/Ge Achieved by Ion Implantation After Germanidation Technique

High-Performance Germanium pMOSFETs With NiGe Metal Source/Drain Fabricated by Microwave Annealing

The material characterization of nickel germanosilicides on SiGe/Si substrate and the contact size effect on Schottky diodes

Formation of Nickel Germanides from Ni Layers with Thickness below 10 Nm

Solid-Phase Reaction Between Co, Ni/n-poly-Si0.84Ge0.16 and Schottky Barrier Properties of the Formed Contacts

Pt interlayer effects on Ni germanosilicide formation and contact properties

Schottky Barrier Height Modulation of Nickel Germanide Schottky Diodes by the Germanidation-Induced Dopant Segregation Technique

Tuning of the Schottky Barrier Height in Nige/N-Ge Using Ion-Implantation after Germanidation Technique

Morphology and Electrical Performance Improvement of NiGe/Ge Contact by P and Sb Co-implantation

Characterization of thermal stability of Ni(SiGe)/n-SiGe contact formed by isothermal annealing

Formation of Ni Mono-Germanosilicide on Heavily B-doped Epitaxial SiGe for Ultra-Shallow Source/drain Contacts

Solid-Phase Reaction of Ni with Amorphous SiGe Thin Film on SiO2

Performance Comparison of Pt/Au and Ni/Au Schottky Contacts on Alxga1-X N/Gan Heterostructures at High Temperatures

Ge Nanowire Transistors with High-Quality Interfaces by Atomic-Scale Thermal Annealing

Solid-Phase Reaction And Schottky Contact Properties Of Co/N-Poly-Si0.84ge0.16/N-Si(100)