Investigation of Ultrathin Ni Germanosilicide for Advanced pMOS Contact Metallization
Shujuan Mao,Chao Zhao,Jinbiao Liu,Guilei Wang,Ben Li,Weibing Liu,Menghua Li,Yaodong Liu,Dan Zhang,Jing Xu,Jianfeng Gao,Yongliang Li,Wenwu Wang,Dapeng Chen,Junfeng Li,Tianchun Ye,Jun Luo
DOI: https://doi.org/10.1109/ted.2020.3026986
IF: 3.1
2020-11-01
IEEE Transactions on Electron Devices
Abstract:Ultrathin Ni germanosilicide liner (<50 Å) is employed in advanced pMOS contact metallization in this work. Due to the intrinsic high work function, the NiSi<sub>x</sub>Ge<sub>y</sub>/p<sup>+</sup>-SiGe:B contacts show improved specific contact resistivity ( $rho _{text {c}}$ ) with respect to conventional TiSi<sub>x</sub>Ge<sub>y</sub>/p<sup>+</sup>-SiGe:B ones. It is further demonstrated that the $rho _{text {c}}$ of NiSi<sub>x</sub>Ge<sub>y</sub>/p<sup>+</sup>-SiGe:B contacts is correlated with both Ni thickness and post metal anneal (PMA). Utilizing Ge preamorphization implant (Ge PAI) followed by B ion implant (B I/I), the active concentration of B dopants is enhanced from $1times 10^{{20}}$ cm $^{-{3}}$ for reference to $6times 10^{{20}}$ cm $^{-{3}}$ . Consequently, a remarkably lowered $rho _{text {c}}$ of $sim 7.42times 10^{-{9}} ,Omega cdot $ cm<sup>2</sup> is achieved for NiSi<sub>x</sub>Ge<sub>y</sub>/p<sup>+</sup>-SiGe:B contacts, where Ni layer is 20 Å and PMA temperature is 500 °C.
engineering, electrical & electronic,physics, applied