Abstract:The thermal stability of NiSi films in Ni/Pt/(111)Si and Ni/Pt/(100)Si bilayered systems was investigated. In the Ni/Pt/(111)Si system, the NiSi films formed at 640 degreesC have an epitaxial relationship of (100)NiSi parallel to (111)Si and [0 (1) over bar0]NiSi parallel to [01 (1) over bar ]Si with the substrates. On the other hand, those formed on (100)Si substrates were polycrystalline although the experimental parameters are the same as those in Ni/Pt/(111)Si samples. In both cases, NiSi and PtSi formed a solid solution Ni1-xPtxSi following Vegard's law. While the thermal stability of NiSi films is improved in both cases compared with the Ni/Si system, the thermal stability of the textured NiSi films formed on (111)Si substrates is higher than their polycrystalline counterparts formed on (100)Si substrates. This is attributed to the reduced interfacial energy and consequently increased activation energy for the nucleation of NiSi2 due to the formation of textured NiSi films on (111)Si substrates. At 900 degreesC, the Ni(Pt)Si film formed in Ni/Pt/(100)Si system decomposed into separate phases of NiSi and PtSi with noticeable lattice deformation. Differences between the texture evolution of NiSi films in Ni/Pt/Si and Ni(Pt) alloy/Si systems were also reported and explained from both kinetic and thermodynamic aspects. (C) 2001 American Institute of Physics.

Solid Phase Reaction of Ni/Pd/Si(100) and Enhancement of NiSi Thermal Stability Study

Silicide Formation for Ni and Pd Bilayers on Si(100) Substrates

The Effect of Pd Addition on Silicide Formation for Ni/Pd Bilayers on Silicon

Enhanced Effects of Pt Layer on Thermal Stability of NiSi Thin Film by Solid Phase Reaction of Ni/Si(100) System

Thermal stability, phase and interface uniformity of Ni-silicide formed by Ni–Si solid-state reaction

Comparison of the Thermal Stabilities of Nisi Films in Ni/Si, Ni/Pd/Si and Ni/Pt/Si Systems

Mechanism about Improvement of NiSi Thermal Stability for Ni/Pt/Si(1 1 1) Bi-Layered System

Ni(Pt)Si Thin Film Formation and Its Electrical Characteristics with Si Substrate

Enhanced Thermal Stability of NiSi Films on Si(111) Substrates by a Thin Pt Interlayer

Effect of Pt Interlayer on Thermal Stability of NiSi Films

Solid-Phase Reaction of Ni with Amorphous SiGe Thin Film on SiO2

Improvement Of The Thermal Stability Of Nisi Films By Using A Thin Pt Interlayer

Comparison Of The Thermal Stability Of Nisi Films In Ni/Pt/(111)Si And Ni/Pt/(100)Si Systems

Pt interlayer effects on Ni germanosilicide formation and contact properties

Phase-controlled Synthesis of Nickel Silicide Nanostructures

NiPt silicide agglomeration accompanied by stress relaxation in NiSi(010) ∥ Si(001) grains

Surface-energy Triggered Phase Formation and Epitaxy in Nanometer-Thick Ni1−xPtx Silicide Films

Study of Nickel Silicide Formation on Si(110) Substrate

Formation of Nickel-Platinum Silicides on a Silicon Substrate: Structure, Phase Stability, and Diffusion from Ab initio Computations

Explanation of the Enhancement of NiSi Thermal Stability According to TFD Equations and Miedema's Model

Study of Ni/Si(100) solid-state reaction with Al addition