The Effect of Pd Addition on Silicide Formation for Ni/Pd Bilayers on Silicon

XP Qu,C Detavernier,RL Meirhaeghe,GP Ru,BZ Li

DOI: https://doi.org/10.1109/icsict.2001.981527

2001-01-01

Abstract:Ni/Pd bilayers were deposited on n-Si [100] substrates and annealed up to 900/spl deg/C using rapid thermal annealing (RTA). Results show that the nucleation temperature for NiSi/sub 2/ is delayed due to the Id addition. The higher the Pd addition, the higher the nucleation temperature of NiSi/sub 2/. Meanwhile, the PdSi nucleation is promoted because of alloying with Ni and PdSi can be formed at temperature lower than 750/spl deg/C. When the Ni/Pd/Si samples were annealed at 500/spl deg/C, the barrier height value of the formed silicide/Si contact is near that of NiSi/Si. Annealing at 600/spl deg/C increased the barrier height value, which indicates that Ni(Pd)Si was formed. The I-V-T measurements on both Ni/Pd/Si and Ni/Si samples show that, the Schottky barrier formed from Ni/Pd/Si annealed at 600/spl deg/C has a better linear I-V characteristic and lower leakage current than those of NiSi/Si.