Enhanced Thermal Stability of NiSi Films on Si(111) Substrates by a Thin Pt Interlayer

JF Liu,HB Chen,JY Feng

DOI: https://doi.org/10.1016/s0022-0248(00)00891-5

IF: 1.8

2000-01-01

Journal of Crystal Growth

Abstract:A thin interlayer of Pt can greatly enhance the thermal stability of NiSi films formed by rapid thermal annealing (RTA) on Si(1 1 1) substrates, as was revealed by X-ray diffraction (XRD) data and sheet resistance measurement. High-resolution transmission electron microscopy (HRTEM) reveals a well-defined interface between the Ni(Pt)Si film and the Sill II) substrate for the Ni/Pt/Si sample annealed at 640 degreesC. The orientation relationship in this sample determined by selected area electron diffraction (SAED) was NiSi(1 0 0)//Si(1 1 1) and NiSi[0 (1) over bar0]//Si[0 1 (1) over bar]. With the increase of temperature, the texture of NiSi films transform from NiSi(1 0 0)//Si(1 1 1) to NiSi(0 0 1)//Si(1 1 1). The reduction in the interfacial energy due to the formation of the (1 0 0) textured NiSi film is proposed as a possible reason for the improved thermal stability of NiSi and the transition in NiSi texture during high-temperature annealing. Detailed study on the XRD data combined with Auger electron spectra (AES) indicates PtSi and NiSi form a solid solution following Vegard's law, which adjusts the lattice constant ratio c/b to root3 and may account for the texture of NiSi(1 0 0)//Si(1 1 1). (C) 2000 Published by Elsevier Science B.V.