Abstract:Nickel monosilicide (NiSi) has emerged as an excellent material of choice for source-drain contact applications below 45 nm node complementary metal-oxide-semiconductor (CMOS) technology. We have investigated the formation of nanoscale NiSi by ion irradiation of Si (~5 nm)/Ni(~15 nm)/Si, grown under ultrahigh vacuum environment. Irradiation was carried out at room temperature with 1 MeV Si+ ions. X-ray diffraction (XRD) and transmission electron microscopy (TEM) were employed for analysis. With increasing ion fluence ion beam mixing occurs and more and more Si is incorporated into the Ni layer and this layer gets amorphized. At an even higher fluence a recrystallized uniform nickel monosilicide ({\eta}-NiSi) layer is formed. Several planar spacings of different Miller indices of {\eta}-NiSi have been observed in XRD and TEM. Additionally, an oscillatory amorphization and recrystallization has been observed in the substrate Si with increasing ion fluence. To our knowledge, this has never been observed in ion irradiation of bare Si in decades of work in this area. The oscillatory amorphization/recrystallization in Si is apparently Ni-induced. Irradiation displaces Ni and produces a distribution of Ni in amorphized Si. Irradiation at a higher fluence produces two recrystallized Si bands in amorphous Si with concomitant accumulation of Ni at the amorphous/crystalline interfaces. On further increase of irradiation fluence the recrystallized Si bands again pass through amorphization and recrystallization. The total thickness of recrystallized as well as amorphous Si shows an oscillatory behavior as a function of ion fluence.

Nickel Induced Phase Separation and Nanocrystal Growth in Si-Rich Silica Films

Nickel Induced Crystallization of Amorphous Silicon Thin Films

Nickel-Induced Enhancement of Photoluminescence from Si-Rich Silica Films

Research on Nickel Induced Silicon Nanocrystal Growth

The Effects of Extended Heat Treatment on Ni Induced Lateral Crystallization of Amorphous Silicon Thin Films

The study of nickel-induced enhancement of near-infrared luminescence in Si-rich silicon oxide films

Influence of Nickel Precipitation on the Formation of Denuded Zone in Czochralski Silicon

Phase-controlled Synthesis of Nickel Silicide Nanostructures

Recombination behavior of nickel in cast multicrystalline silicon

Characterization of the Interface Region During the Agglomeration of Silicon Nanocrystals in Silicon Dioxide

Solid-Phase Reaction of Ni with Amorphous SiGe Thin Film on SiO2

Enhanced Thermal Stability of NiSi Films on Si(111) Substrates by a Thin Pt Interlayer

Influence of Ti Interlayer on Untrathin Ni Film Silicidation

Effect of Pt Interlayer on Thermal Stability of NiSi Films

Annealing Effects on the Microstructure and Photoluminescence Properties of Ni-Doped Zno Films

Microstructural evolution of wet deposited nickel interfacial phases on phosphorus doped silicon surface

Influence of annealing on microstructures and photoluminescence of nano-composite silicon film

Growth of Nickel Films on the Surface of Silicon Nanowire

Effect of erbium interlayer on nickel silicide formation on Si(100)

In-situ nanoscale characterization of composition and structure during formation of ultrathin nickel silicide

Nanoscale η-NiSi formation via ion irradiation of Si/Ni/Si