Abstract:Nickel (Ni) induced crystallization of amorphous silicon (a-Si) has been studied by selective deposition of Ni on a-Si thin films. The a-Si under and near the Ni-covered regions was found to be crystallized after heat treatment at 500 °C from 1 to 90 h. Micro-Auger electron spectroscopy revealed that a large amount of Ni stayed in the region under the original Ni coverage, but no Ni was detected either in the crystallized region next to the Ni coverage or in the amorphous region beyond the front of the laterally crystallized Si. X-ray photoelectron spectroscopy revealed a nonuniform Ni distribution through the depth of the crystallized film under the original Ni coverage. In particular, a Ni concentration peak was found to exist at the interface of the crystallized Si and the buried oxide. It was found that a layer of 5-nm-thick Ni could effectively induce lateral crystallization of over 100 μm of a-Si, but the lateral crystallization rate was found to decrease upon extended heat treatment. Transmission electron microscopy analysis showed that the crystallized film under the Ni coverage was composed of randomly oriented fine grains, while that outside the Ni coverage was mainly composed of large (110)-oriented grains. A unified mechanism is proposed to explain the Ni induced crystallization of a-Si and possible reasons for the reduction in the lateral crystallization rate are discussed.

Nickel-Induced Enhancement of Photoluminescence from Si-Rich Silica Films

The study of nickel-induced enhancement of near-infrared luminescence in Si-rich silicon oxide films

Nickel Induced Phase Separation and Nanocrystal Growth in Si-Rich Silica Films

Strong near-infrared luminescence from NiSi2-passivated silicon nanocrystals embedded in SiOx films

Nickel Induced Crystallization of Amorphous Silicon Thin Films

Annealing Effects on the Microstructure and Photoluminescence Properties of Ni-Doped Zno Films

Research on Nickel Induced Silicon Nanocrystal Growth

Influence of annealing on microstructures and photoluminescence of nano-composite silicon film

Photoluminescence Enhancement of Si Nanocrystals Embedded in SiO 2 by Thermal Annealing in Air

Characterization of the Interface Region During the Agglomeration of Silicon Nanocrystals in Silicon Dioxide

Effect of annealing on microstructure and photoluminescence of nano-composite silicon film

Nanocrystalline Si Studied by Beam-Based Positron Annihilation Spectroscopy

Light Emission from Si Nanoclusters Formed at Low Temperatures

Effect of Annealing Temperature on Photoluminescence Performance and Structure of Si-rich Silicon Nitride

Photoluminescence enhancement of Silicon-rich silicon nitride film induced by silver localized surface plasmon

A Study of the Correlation Between Ultraviolet and Infrared Emission in Ni-doped SiOxfilms

Annealing effect on structures and luminescence of amorphous SiN films

Effects of Excess Silicon on the 1540 Nm Er3+ Luminescence in Silicon Rich Oxynitride Films

Photoluminescence from Silicon Nanocrystals in Encapsulating Materials

Electroluminescence from Metal–oxide–semiconductor Devices Based on Erbium Silicate Nanocrystals and Silicon Nanocrystals Co-Embedded in Silicon Oxide Thin Films