Abstract:A series of Si-rich amorphous silicon carbide (a-SiC:H) thin films were deposited in conventional plasma enhanced chemical vapor deposition system with various gas ratio R = [CH 4 ]/[SiH 4 ]. The microstructural, optical and electronic properties of as-deposited films were investigated in this study. It was found that optical band gap was linearly proportional to carbon content in the films and it could be controlled in a range of 1.8–2.4 eV by changing the gas ratio, R . Both dark and photo conductivities in room temperature were decreased with the increasing of carbon content in the films, and the photosensitivity reached as high as 10 4 for the film with the optical band gap of 1.96 eV. The as-deposited samples were subsequently annealed at the temperatures of 900°C and 1000°C. The formation of nanocrystalline silicon (nc-Si) dots in amorphous silicon carbide (a-SiC) host matrix was shown. The dark conductivity was enhanced by five orders of magnitude after annealing compared with that of as-deposited films. The result of temperature-dependent conductivity suggested that the property of carrier transport was dominated by conduction process between the extended states. Furthermore, room temperature electroluminescence (EL) was achieved from nc-Si/SiC system and the possible mechanism of radiative recombination mechanism was discussed.

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