Abstract:The radio frequency (r. f.) magnetron sputtering was used for preparing silicon-rich silicon nitride films deposited on polished Si substrates at 80 degrees C substrate temperature. The high-purity Ar was used as a sputtering gas and the high-purity N2 as a reactive gas. The silicon nitride films with different Si-rich degrees were obtained by changing the flow ratio of Ar/N2, and subsequently the samples were annealed at a high temperature in pure N2 ambience. The influence of annealing on the properties of films was investigated by X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD) and photoluminescence (PL). The appearance of Si-N bonds can be confirmed by the XPS, from which the ratio of Si/N can be rough estimated. Therefore, the XPS reveals that the sample before annealing has a high content of Si which is the premise to come into being nanometer Si. However, the PL peak of the films before annealing in the visible light region was not observed obviously. The XRD results indicate that the presence of Si clusters buried in the films after annealing was confirmed by two novel diffraction peaks, which are related to nanometer Si. As the flow ratio of Ar/N2 decreased, the emission intensity of PL peak in the visible light region was enhanced, accompanied with a blue-shift of emission peak. According to the quantum confinement effect, the blue-shift of PL peak should be attributed to the enlarged band gap of Si clusters in the sample, and the increased intensity of the PL peak turns out to be due to the size of nanometer Si. The two important factors of annealing treatment and flow ratio of Ar/N2 were studied, which have an intimate connection with emitting mechanism in PL. The blue-shift of PL peak caused by nanometer Si embodied in the silicon nitride thin films depends on the sputtering condition, such as flow ratio, deposition temperature and sputtering pressure.

Effect of Post-Annealing in Oxygen Atmosphere on the Photoluminescence Properties of Nc-Si Rich Sio2 Films

Influence of annealing on microstructures and photoluminescence of nano-composite silicon film

Effect of annealing on microstructure and photoluminescence of nano-composite silicon film

Effects of Si Content on the Optical and Electrical Properties of SiOx Films

Photoluminescence Enhancement of Si Nanocrystals Embedded in SiO 2 by Thermal Annealing in Air

Annealing Environment Effect on the Nanocrystalline Silicon Related Photoluminescence in Silicon Rich Alumina Films

Effects of Post Annealing Atmosphere on Electrical and Optical Properties of SnO2：F Thin Films

[Influence of Annealing and Sputtering Ambience on the Photoluminescence of Silicon Nitride Thin Films].

Annealing Effects on Oxygen-Rich Silicon Oxynitride

Effects of Post Annealing Atmosphere on Low-emission of SnO2: F Thin Films

Annealing effect on structures and luminescence of amorphous SiN films

Positron annihilation spectroscopy of the interface between nanocrystalline Si and SiO2

Effect of Annealing Temperature on Photoluminescence Performance and Structure of Si-rich Silicon Nitride

Preparation and Photoluminescence of Nanocrystalline Si-Rich Silicon Oxide Films by Pecvd

Oxygen Annealing Behavior in Multicrystalline Silicon

Effect of annealing on photoluminescence of passivated porous silicon

Characterization of the Interface Region During the Agglomeration of Silicon Nanocrystals in Silicon Dioxide

High Temperature Annealing Behaviors of Luminescent SiO x ∶H Films

Effect of thermal annealing on the luminescent and structural properties of the SiO x C y thin films by organic catalytic chemical vapor deposition

The effects of annealing temperature on photoluminescence of silicon nanoparticles embedded in SiNx matrix

Influences of Annealing Temperature on the Optical Properties of SiOx Thin Film Prepared by Reactive Magnetron Sputtering