A Study On The Microstructure Of Oxygen-Rich Silicon Oxynitride
Yaping Dan,Ruifeng Yue,Yan Wang,YongZhao Yao,Litian Liu
DOI: https://doi.org/10.1117/12.444560
2001-01-01
Abstract:A detailed study is carried out on four oxygen-rich silicon oxynitride samples as an as-deposited one and other three same ones annealed at 600degreesC, 750degreesC and 900degreesC respectively by Infrared spectroscopy (IR) and X-photoelectron spectroscopy (XPS). It is shown that the as-deposited sample consists of configurations as SiNx (x=1,2,3,4), OnSi4-n-NH (n=0,1,2,3), Si-O-4, Si-OH, N-OH, SiN-O and SiN=O. With the annealing temperature rising, other configurations diminish or disappear and thus the microstructure mainly consists of O3Si-NH and Si-O-4. As the temperature steps higher to 900degreesC, most of His released, leading to the appearance of a great amount of O3SiN- with a N dangling bonding, thus a sharp increase in the inner stress, and the reappearance of SiN-O, SiN=O and Si=N configurations helps to compensate the inner stress.