Abstract:Arrays of vertically aligned single crystalline Si nanowires (NWs) decorated with arbitrarily shaped Si nanocrystals (NCs) have been fabricated by a silver assisted wet chemical etching method. Scanning electron microscopy and transmission electron microscopy are performed to measure the dimensions of the Si NWs as well as the Si NCs. A strong broad band and tunable visible (2.2 eV) to near-infrared (1.5 eV) photoluminescence (PL) is observed from these Si NWs at room temperature (RT). Our studies reveal that the Si NCs are primarily responsible for the 1.5-2.2 eV emission depending on the cross-sectional area of the Si NCs, while the large diameter Si/SiOx NWs yield distinct NIR PL consisting of peaks at 1.07, 1.10 and 1.12 eV. The latter NIR peaks are attributed to TO/LO phonon assisted radiative recombination of free carriers condensed in the electron-hole plasma in etched Si NWs observed at RT for the first time. Since the shape of the Si NCs is arbitrary, an analytical model is proposed to correlate the measured PL peak position with the cross-sectional area (A) of the Si NCs, and the bandgap (E(g)) of nanostructured Si varies as E(g) = E(g) (bulk) + 3.58 A(-0.52). Low temperature PL studies reveal the contribution of non-radiative defects in the evolution of PL spectra at different temperatures. The enhancement of PL intensity and red-shift of the PL peak at low temperatures are explained based on the interplay of radiative and non-radiative recombinations at the Si NCs and Si/SiO(x) interface. Time resolved PL studies reveal bi-exponential decay with size correlated lifetimes in the range of a few microseconds. Our results help to resolve a long standing debate on the origin of visible-NIR PL from Si NWs and allow quantitative analysis of PL from arbitrarily shaped Si NCs.

Strong near-infrared luminescence from NiSi2-passivated silicon nanocrystals embedded in SiOx films

Strong Near-Infrared Luminescence from Nisi2-Passivated Silicon Nanocrystals Embedded in Siox Films

Nickel-Induced Enhancement of Photoluminescence from Si-Rich Silica Films

The study of nickel-induced enhancement of near-infrared luminescence in Si-rich silicon oxide films

Near-infrared Light Emission from Si-rich Oxynitride Nanostructures

Photoluminescence Enhancement of Si Nanocrystals Embedded in SiO 2 by Thermal Annealing in Air

Influence of annealing on microstructures and photoluminescence of nano-composite silicon film

Enhancement and Stability of Photoluminescence from Si Nanocrystals Embedded in A Sio2 Matrix by H-2-Passivation

Optical Properties of High Photoluminescence Silicon Nanocrystals Embedded in SiO2 Matrices Obtained by Annealing Hydrogen Silsesquioxane

A Study of the Correlation Between Ultraviolet and Infrared Emission in Ni-doped SiOxfilms

Photoluminescence from Silicon Nanocrystals in Encapsulating Materials

Effect of annealing on microstructure and photoluminescence of nano-composite silicon film

Annealing Effects on the Microstructure and Photoluminescence Properties of Ni-Doped Zno Films

Effect of Post-Annealing in Oxygen Atmosphere on the Photoluminescence Properties of Nc-Si Rich Sio2 Films

Nickel Induced Phase Separation and Nanocrystal Growth in Si-Rich Silica Films

Origin of visible and near-infrared photoluminescence from chemically etched Si nanowires decorated with arbitrarily shaped Si nanocrystals

Optical Properties of Nanocrystal-Silicon Thin Films on Silicon Nanopillar Arrays after Thermal Annealing

Pseudo nanocrystal silicon induced luminescence enhancement in a-Si /SiO2 multilayers

Influence of hydrogen passivation on the luminescence of Si quantum dots embedded in Si3Nx

Temperature-dependent Photoluminescence of Silicon Nanocrystals Embedded in SiO2 Matrix

Enhancement of light emission of a low-resistivity silicon nanocrystal thin film: A simulational and experimental study